基于界面自组装薄膜的电存储器件的研究
发布时间：2018-09-05 14:55
【摘要】：基于固液界面反应的有机高稳定电存储器件 有机电存储器件是指器件在相同电压下可以存在两种不同的电阻态,相当于存储器中的“0”态和“1”态,可广泛应用在数字信息存储器和电路开关之中；而固、液界面反应的方法则是一种新型薄膜制备工艺,它具有工艺简单、制膜均匀、易大面积制备等优点。因此基于固、液界面反应的有机电存储器件具有低成本、工艺简单、易于大面积制作和可折叠等各种优点,这为信息产业制造技术提供了新的发展方向,并有望最终替代无机材料,从而得到广泛的关注。 本文主要研究了有机材料DMcT分子,我们利用界面反应的方法制备了两种可用于电存储器件的新型功能层薄膜,并对功能层薄膜进行了相应研究,继而通过工艺改进来提高器件性能,最终得到了两种具备高稳定性能的一次写入多次读取(WORM)电存储器件。我们对器件的功能层、界面等进行了初步研究,提出了相应的成膜机理以及器件的开关机制。本文具体工作如下： 1、利用分子自组装技术在Al膜表面制备单分子层薄膜DMcT,研究了基于分子自组装技术的电存储器件Al/DMcT/Cu,对器件的制备工艺、基本电学性能、薄膜特性、界面特性等进行了相应研究,通过各种分析测试提出器件的filament模型导电机制；并对器件进行延伸拓展,在固、液界面反应方向进行了大量尝试探索,以期获得高性能的电存储器件。 2、利用固、液界面原位反应的方法制备了Cu-DMcT配位聚合物薄膜,制备成电存储器件Cu/DMcT/Al,发现器件具备良好的电存储特性,对器件制备工艺进行大量改进尝试,改善了器件存储性能,并通过各种分析表征手段对器件开关机制进行了讨论分析。 附录“动态”分子整流器研究 本实验室之前已经对“动态”分子整流现象进行过一定研究探讨,本论文主要工作内容为：在实验室之前研究的基础上,对于“动态”分子高整流比现象进行了大量的统计验证。
[Abstract]:Organic high stability electrical memory devices based on solid-liquid interface reaction have electromechanical storage devices, which refer to the existence of two different resistance states at the same voltage, equivalent to the "0" and "1" states in the memory. It can be widely used in digital information memory and circuit switch, but the method of solid-liquid interface reaction is a new kind of thin film preparation technology, which has the advantages of simple process, uniform film preparation and easy preparation in large area. Therefore, electromechanical memory devices based on solid-liquid interface reaction have many advantages, such as low cost, simple process, easy to fabricate in large area and foldable, which provides a new development direction for manufacturing technology in information industry. And it is expected to replace inorganic materials, and thus get wide attention. In this paper, we mainly study the organic material DMcT molecule. We have prepared two new functional layer thin films which can be used in electric memory devices by the method of interfacial reaction, and have carried on the corresponding research to the functional layer thin film. Then through the process improvement to improve the performance of the device, finally two kinds of high stability write multiple read (WORM) electronic memory devices are obtained. We have studied the functional layer and interface of the device, and put forward the corresponding film forming mechanism and the switch mechanism of the device. The main work of this paper is as follows: 1. The fabrication process and basic electrical properties of monolayer thin film (DMcT,) based on molecular self-assembly (MSAM) were studied by preparing monolayer thin film DMcT, on the surface of Al films, and the basic electrical properties of Al/DMcT/Cu, based on molecular self-assembly technology were studied. The film characteristics and interface characteristics are studied, and the conductive mechanism of filament model is put forward through various analyses and tests, and the devices are extended and explored in the reaction direction of solid and liquid interface. In order to obtain high performance electric storage devices. 2, Cu-DMcT coordination polymer films were prepared by in situ reaction of solid and liquid interfaces, and Cu/DMcT/Al, devices were prepared. A large number of attempts were made to improve the fabrication process of the device and the storage performance of the device was improved. The mechanism of the device switch was discussed and analyzed by various means of analysis and characterization. The "dynamic" molecular rectifier has been studied and discussed in this laboratory before the study of the "dynamic" molecular rectifier. The main work of this paper is: based on the research before the laboratory, The phenomenon of "dynamic" molecular high rectifier ratio is verified by a large number of statistics.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：O484.1;TP333
[Abstract]:Organic high stability electrical memory devices based on solid-liquid interface reaction have electromechanical storage devices, which refer to the existence of two different resistance states at the same voltage, equivalent to the "0" and "1" states in the memory. It can be widely used in digital information memory and circuit switch, but the method of solid-liquid interface reaction is a new kind of thin film preparation technology, which has the advantages of simple process, uniform film preparation and easy preparation in large area. Therefore, electromechanical memory devices based on solid-liquid interface reaction have many advantages, such as low cost, simple process, easy to fabricate in large area and foldable, which provides a new development direction for manufacturing technology in information industry. And it is expected to replace inorganic materials, and thus get wide attention. In this paper, we mainly study the organic material DMcT molecule. We have prepared two new functional layer thin films which can be used in electric memory devices by the method of interfacial reaction, and have carried on the corresponding research to the functional layer thin film. Then through the process improvement to improve the performance of the device, finally two kinds of high stability write multiple read (WORM) electronic memory devices are obtained. We have studied the functional layer and interface of the device, and put forward the corresponding film forming mechanism and the switch mechanism of the device. The main work of this paper is as follows: 1. The fabrication process and basic electrical properties of monolayer thin film (DMcT,) based on molecular self-assembly (MSAM) were studied by preparing monolayer thin film DMcT, on the surface of Al films, and the basic electrical properties of Al/DMcT/Cu, based on molecular self-assembly technology were studied. The film characteristics and interface characteristics are studied, and the conductive mechanism of filament model is put forward through various analyses and tests, and the devices are extended and explored in the reaction direction of solid and liquid interface. In order to obtain high performance electric storage devices. 2, Cu-DMcT coordination polymer films were prepared by in situ reaction of solid and liquid interfaces, and Cu/DMcT/Al, devices were prepared. A large number of attempts were made to improve the fabrication process of the device and the storage performance of the device was improved. The mechanism of the device switch was discussed and analyzed by various means of analysis and characterization. The "dynamic" molecular rectifier has been studied and discussed in this laboratory before the study of the "dynamic" molecular rectifier. The main work of this paper is: based on the research before the laboratory, The phenomenon of "dynamic" molecular high rectifier ratio is verified by a large number of statistics.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：O484.1;TP333
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