阻变式随机存储器的电极尺寸研究及交叉阵列集成应用

发布时间：2018-09-07 21:13

【摘要】：近年来,存储器受到人们的广泛关注,并且在各种电子产品中得到了应用。存储器主要分为非易失性存储器和易失性存储器。在非易失性存储器中,阻变式随机存储器(RRAM)因其结构简单、读取速度快、功耗低、集成密度高等优点,逐渐成为研究的热点。在阻变式随机存储器中,基于导电细丝模型的电阻转换机制已经普遍被人们所接受,并且阻变式随机存储器中的导电细丝直径为纳米量级,具备高密度存储的潜力。在本论文中,我们分别制备和研究了基于活性金属阳离子迁移和氧离子迁移模型的两种阻变器件,同时对器件的集成做了一些探索的工作,包括电极尺寸的影响以及交叉阵列结构器件的研究。我们利用光刻技术和磁控溅射的方法制备了不同电极尺寸的Ag/Zn S/ITO和Pt/Ta2O5/ITO阻变器件,进一步研究了不同电极尺寸对阻变性能的影响,发现随着电极尺寸的减小,两种器件的高阻都有所增加,并且使器件开关比增大,而两种器件的低阻并没有随着电极尺寸发生明显的变化,验证了器件是一种导电丝的机制,导电细丝的通断是局域的,因此,RRAM器件更有利易于实现大规模的集成及高密度存储。同时我们利用光刻及磁控溅射的方法制备了Ag/Zn S/Au交叉阵列器件,并对其进行了高低阻循环及保持特性的测试,发现器件能够实现稳定的高低阻转换,并且具有较高的开关比。因此,这种Ag/Zn S/Au交叉阵列器件实现了非易失性阻变特性。
[Abstract]:In recent years, memory has been widely concerned and applied in various electronic products. Memory is mainly divided into non-volatile memory and volatile memory. In non-volatile memory, resistive random access memory (RRAM) has become a hot research area because of its simple structure, fast reading speed, low power consumption and high integration density. In the resistive random access memory (RAM), the resistance conversion mechanism based on the conductive filament model has been widely accepted, and the diameter of the conductive filament in the resistive random access memory is of nanometer magnitude, which has the potential of high density storage. In this thesis, we have prepared and studied two kinds of resistive devices based on active metal cationic migration model and oxygen ion migration model respectively. It includes the influence of electrode size and the research of cross array structure device. Ag/Zn S/ITO and Pt/Ta2O5/ITO resistors with different electrode sizes were fabricated by photolithography and magnetron sputtering. The effects of different electrode sizes on the resistance properties were further studied. It was found that with the decrease of electrode size, The high resistance of both devices increases and the switching ratio of the two devices increases. However, the low resistance of the two devices does not change obviously with the electrode size. It is proved that the device is a mechanism of conducting wire, and the opening and breaking of the conductive filament is local. Therefore, RRAM devices are more convenient for large scale integration and high density storage. At the same time, Ag/Zn S/Au cross array devices were fabricated by photolithography and magnetron sputtering, and the characteristics of high and low resistance cycle and retention were tested. It was found that the device can achieve stable high resistance conversion and has a high switching ratio. Therefore, this Ag/Zn S/Au cross-array device realizes the non-volatile resistance characteristics.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TP333

【相似文献】