纳米尺度相变存储器小型化研究进展

发布时间：2019-01-05 14:28

【摘要】：相变存储器(PCRAM)因其具有非挥发性、循环寿命长、结构简单、与现有CMOS工艺相匹配等优点,在存储技术领域受到了广泛重视。综述了相变存储器器件小型化的研究现状,介绍了相变存储器的基本原理和特性。概述了目前相变存储器器件小型化的方法,主要包括器件结构优化和材料优化。器件结构优化的主要目的是减小有效相变体积以降低单元尺寸。材料优化主要是针对电极材料,选用性能优异的新材料替代传统金属材料作电极材料以实现器件小型化。对不同方法制作的各种器件结构所涉及的工艺特点进行了分析,并且比较了不同的器件结构对操作电流的影响,为相变存储器器件小型化的进一步发展提供了参考。
[Abstract]:Phase change memory (PCRAM) has been paid more and more attention in the field of storage technology because of its advantages of non-volatility, long cycle life, simple structure and matching with existing CMOS process. The research status of phase change memory miniaturization is reviewed, and the basic principle and characteristics of phase change memory are introduced. The miniaturization methods of phase change memory devices are summarized, including device structure optimization and material optimization. The main purpose of the device structure optimization is to reduce the effective phase change volume and reduce the unit size. Material optimization is mainly aimed at electrode materials. New materials with excellent performance are used as electrode materials instead of traditional metal materials in order to realize miniaturization of devices. The process characteristics of various device structures made by different methods are analyzed, and the effects of different device structures on the operating current are compared, which provides a reference for the further development of the miniaturization of phase-change memory devices.
【作者单位】：中国科学院半导体研究所半导体集成技术工程研究中心;
【基金】：国家自然科学基金面上资助项目(61376420)
【分类号】：TP333

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