基于相变存储器的存储系统与技术综述

发布时间：2019-01-24 17:38

【摘要】：随着处理器和存储器之间性能差距的不断增大,"存储墙"问题日益突出,但传统DRAM器件的集成度已接近极限,能耗问题也已成为瓶颈,如何设计扎实有效的存储架构解决存储墙问题已成为必须面对的挑战.近年来,以相变存储器(phase change memory,PCM)为代表的新型存储器件因其高集成度、低功耗的特点而受到了国内外研究者的广泛关注.特别地,相变存储器因其非易失性及字节寻址的特性而同时具备主存和外存的特点,在其影响下,主存和外存之间的界限正在变得模糊,将对未来的存储体系结构带来重大变化.重点讨论了基于PCM构建主存的结构,分析了其构建主存中的写优化技术、磨损均衡技术、硬件纠错技术、坏块重用技术、软件优化等关键问题,然后讨论了PCM在外存储系统的应用研究以及其对外存储体系结构和系统设计带来的影响.最后给出了PCM在存储系统中的应用研究展望.
[Abstract]:With the increasing performance gap between processor and memory, the problem of "memory wall" is becoming more and more serious. However, the integration of traditional DRAM devices is approaching the limit, and the problem of energy consumption has become the bottleneck. How to design a solid and effective storage architecture to solve the storage wall problem has become a challenge. In recent years, novel memory devices, represented by phase change memory (phase change memory,PCM), have attracted wide attention from researchers at home and abroad because of their high integration and low power consumption. In particular, phase change memory is characterized by both main memory and external memory because of its nonvolatile and byte addressing properties. Under its influence, the boundary between main memory and external memory is becoming blurred. Will bring significant changes to the future storage architecture. This paper mainly discusses the structure of main memory based on PCM, and analyzes the key problems such as write optimization technology, wear balance technology, hardware error correction technology, bad block reuse technology, software optimization and so on. Then, the application research of PCM storage system and the influence of its external storage architecture and system design are discussed. Finally, the prospect of application of PCM in storage system is presented.
【作者单位】：清华大学计算机科学与技术系;
【基金】：国家杰出青年科学基金项目(60925006) 国家“八六三”高技术研究发展计划基金项目(2012AA011003)
【分类号】：TP333

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