基于交联PVP薄膜的有机电双稳器件
发布时间：2019-02-28 19:55
【摘要】：有机存储器件的研究是未来电子技术领域的重要方向之一,其中有机电双稳器件因柔性、透明、成本低、制备简单、可大面积制作、可应用在印刷电子等优点而受到广泛深入地研究。用溶液旋涂法制备层状结构有机电双稳器件中存在上层溶液溶解下层薄膜的问题,利用有机薄膜晶体管中应用广泛的交联聚合物薄膜可以解决这一问题。本论文的主要工作就是将交联聚合物薄膜应用在了有机电双稳器件中,对其电双稳工作特性进行了研究和探讨。主要内容如下:(1)通过制备交联PVP薄膜,研究了交联PVP膜的物理特性,包括溶剂抗性、表面接触角、SEM表征等,然后,通过制备Glass/ITO/交联PVP/Al的MIM结构器件来研究交联PVP膜的漏电流电学特性。研究表明,在温度200 ℃、时间1 h的退火条件下,交联性能最佳,PVP膜难以被溶剂溶解。(2)将优化的交联PVP薄膜引入到PCBM/PVP电双稳器件研究中,解决了溶液法制备多层电双稳器件中的溶剂互溶问题,提高了器件的电双稳特性。研究得到结构为Glass/ITO/交联PVP/PCBM/纯PVP/A1的器件性能最好,在电压0 V→-3 V→O V →3 V→0 V扫描方式的Ⅰ-V测试下,其Ⅰ-Ⅴ曲线的开关比最大达到了 2×102,这一结果好于基于未交联PVP制备的器件。此外,结合器件的I-V曲线的线性拟合得到的载流子输运机制,发现在不同电压下,活性层中存在的俘获中心对载流子的俘获与释放是导致器件发生低高态转变的原因。(3)实现了基于交联PVP和纳米Au体系的电双稳器件,器件结构为Glass/ITO/交联PVP/纳米Au/Al,得到了较好的电双稳特性,器件最大开关比可以达到2×103。然后,对该器件的I-V曲线图分段进行数据拟合研究和探讨了该电双稳器件的载流子输运机制,结果表明器件产生电双稳特性的原因是Au纳米颗粒作为俘获中心对载流子的俘获与释放。(4)通过对比以上两种材料体系制备的电双稳器件,发现在交联PVP电双稳器件中,相较于PCBM,纳米Au更适合制备电双稳器件,其制备的器件具有更好的电双稳特性。
[Abstract]:The research of organic storage devices is one of the important directions in the field of electronic technology in the future, in which electromechanical bistable devices can be fabricated on a large scale because of their flexibility, transparency, low cost, simple fabrication, and so on. It can be used in printing electronics and other advantages and has been extensively and in-depth research. The solution spin coating method is used to fabricate layered electromechanical bistable devices. The problem of upper layer solution dissolving the lower layer film can be solved by using the crosslinked polymer film, which is widely used in organic thin film transistor. The main work of this paper is to apply cross-linked polymer film to electromechanical bistable devices, and to study and discuss the electrical bistable working characteristics of cross-linked polymer films. The main contents are as follows: (1) the physical properties of cross-linked PVP films, including solvent resistance, surface contact angle, SEM characterization and so on, were studied by preparing cross-linked PVP films. The leakage current characteristics of cross-linked Glass/ITO/ PVP/Al films were studied by fabricating MIM structure devices of cross-linked PVP films. The results show that the best crosslinking property is obtained under the annealing condition of 200 鈩，
本文编号：2432124
[Abstract]:The research of organic storage devices is one of the important directions in the field of electronic technology in the future, in which electromechanical bistable devices can be fabricated on a large scale because of their flexibility, transparency, low cost, simple fabrication, and so on. It can be used in printing electronics and other advantages and has been extensively and in-depth research. The solution spin coating method is used to fabricate layered electromechanical bistable devices. The problem of upper layer solution dissolving the lower layer film can be solved by using the crosslinked polymer film, which is widely used in organic thin film transistor. The main work of this paper is to apply cross-linked polymer film to electromechanical bistable devices, and to study and discuss the electrical bistable working characteristics of cross-linked polymer films. The main contents are as follows: (1) the physical properties of cross-linked PVP films, including solvent resistance, surface contact angle, SEM characterization and so on, were studied by preparing cross-linked PVP films. The leakage current characteristics of cross-linked Glass/ITO/ PVP/Al films were studied by fabricating MIM structure devices of cross-linked PVP films. The results show that the best crosslinking property is obtained under the annealing condition of 200 鈩，
本文编号：2432124
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