柔性铁电存储结构的研制及表征
发布时间：2019-05-30 09:05
【摘要】：聚偏二氟乙烯(PVDF)以及二氟乙烯、三氟乙烯的共聚物P(VDF-TrFE),具有自发极化强度相对高、极化稳定性强、极化翻转时间短等优点,以及其柔性、兼容性以及易制备性,在世界范围内受到越来越多的关注。用铁电聚合物薄膜制备的非易失性存储器,与半导体集成工艺拥有很好的兼容性,具有柔性、高存储密度、低成本、低功耗、快速读写等特点,有着广阔的应用前景和极大的应用市场。 本文基于铁电聚合物,分别制备了铁电薄膜柔性电容结构、铁电／缓冲层复合电容结构,以及铁电场效应晶体管(FeFET)结构,分别表征其形貌结构和电学性能,确定了基板弯曲对铁电膜的影响。主要研究内容包括： 1、研究了基板弯曲对柔性铁电薄膜电容结构电学性能的影响。利用Sawyer-Tower电路测定薄膜在不同曲率弯曲下的电学性能,给出电滞回线和开关特性曲线,分析了铁电膜矫顽场、剩余极化、电学保持能力、抗疲劳性能和漏电流随基板弯曲的改变。 2、研究了铁电／缓冲层复合电容结构的电学性能,获得改善的电性能。制备不同厚度的铁电／缓冲层复合电容结构,同样利用Sawyer-Tower电路测定薄膜的电学性能,主要针对保持性能和漏电流的改善进行了比较和分析。 3、研究并比较了铁电场效应晶体管(FeFET)结构的输出特性和转移特性。在氧化物半导体MOS结构的基础上,结合铁电膜旋涂工艺,制备场效应晶体管,优化结构参数,以改善存储结构的存储性能和电学稳定性,测试其输出和转移特性曲线,研究铁电薄膜对阈值电压的调制、半导体载流子迁移率和器件存储开关比。
[Abstract]:The polymer P (VDF-TrFE) of polyvinylidene fluoride (PVDF) and difluoroethylene and trifluoroethylene has the advantages of relatively high spontaneous polarization intensity, strong polarization stability and short polarization reversal time, as well as its flexibility, compatibility and easy preparation. More and more attention has been paid to it all over the world. The nonvolatile memory prepared from ferroelectric polymer thin films has good compatibility with semiconductor integrated technology, and has the characteristics of flexibility, high storage density, low cost, low power consumption, fast reading and writing, etc. It has a broad application prospect and a great application market. In this paper, ferroelectric thin film flexible capacitance structure, ferroelectric / buffer layer composite capacitance structure and ferroelectric field effect transistor (FeFET) structure were prepared based on ferroelectric polymer, and their morphology and electrical properties were characterized respectively. The effect of substrate bending on ferroelectric film was determined. The main research contents are as follows: 1. The effect of substrate bending on the electrical properties of flexible ferroelectric thin film capacitors is studied. The electrical properties of thin films under different curvature bending are measured by Sawyer-Tower circuit. The hysteretic loop and switching characteristic curves are given. The coercive field, residual polarization and electrical retention ability of ferroelectric films are analyzed. The fatigue resistance and leakage current change with the bending of the substrate. 2. The electrical properties of ferroelectric / buffer layer composite capacitor structure are studied, and the improved electrical energy is obtained. Ferroelectric / buffer layer composite capacitor structures with different thickness were prepared. The electrical properties of the films were also measured by Sawyer-Tower circuit. The improvement of retention performance and leakage current was compared and analyzed. 3. The output and transfer characteristics of ferroelectric field effect transistor (FeFET) structure are studied and compared. On the basis of oxide semiconductor MOS structure, combined with ferroelectric film spin coating process, the field effect transistor is prepared, and the structural parameters are optimized to improve the storage performance and electrical stability of the storage structure, and the output and transfer characteristic curves are tested. The modulation of threshold voltage, semiconductor carrier mobility and device memory switching ratio of ferroelectric thin films are studied.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TN386;TP333
本文编号：2488715
[Abstract]:The polymer P (VDF-TrFE) of polyvinylidene fluoride (PVDF) and difluoroethylene and trifluoroethylene has the advantages of relatively high spontaneous polarization intensity, strong polarization stability and short polarization reversal time, as well as its flexibility, compatibility and easy preparation. More and more attention has been paid to it all over the world. The nonvolatile memory prepared from ferroelectric polymer thin films has good compatibility with semiconductor integrated technology, and has the characteristics of flexibility, high storage density, low cost, low power consumption, fast reading and writing, etc. It has a broad application prospect and a great application market. In this paper, ferroelectric thin film flexible capacitance structure, ferroelectric / buffer layer composite capacitance structure and ferroelectric field effect transistor (FeFET) structure were prepared based on ferroelectric polymer, and their morphology and electrical properties were characterized respectively. The effect of substrate bending on ferroelectric film was determined. The main research contents are as follows: 1. The effect of substrate bending on the electrical properties of flexible ferroelectric thin film capacitors is studied. The electrical properties of thin films under different curvature bending are measured by Sawyer-Tower circuit. The hysteretic loop and switching characteristic curves are given. The coercive field, residual polarization and electrical retention ability of ferroelectric films are analyzed. The fatigue resistance and leakage current change with the bending of the substrate. 2. The electrical properties of ferroelectric / buffer layer composite capacitor structure are studied, and the improved electrical energy is obtained. Ferroelectric / buffer layer composite capacitor structures with different thickness were prepared. The electrical properties of the films were also measured by Sawyer-Tower circuit. The improvement of retention performance and leakage current was compared and analyzed. 3. The output and transfer characteristics of ferroelectric field effect transistor (FeFET) structure are studied and compared. On the basis of oxide semiconductor MOS structure, combined with ferroelectric film spin coating process, the field effect transistor is prepared, and the structural parameters are optimized to improve the storage performance and electrical stability of the storage structure, and the output and transfer characteristic curves are tested. The modulation of threshold voltage, semiconductor carrier mobility and device memory switching ratio of ferroelectric thin films are studied.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TN386;TP333
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