OTP存储器电荷泵系统的设计研究
发布时间：2019-06-05 04:12
【摘要】：OTP存储器，即一次可编程存储器，具有数据永久保存、功耗低、结构简单、速度快等特点，因而大量应用在SOC系统中作为嵌入式存储器，用来储存系统配置信息、参数值、校准表、代码等各种不需要交换或者交换频率极低的数据。目前市场上主要有两种OTP存储器,熔丝型和反熔丝型。传统的OTP存储器制作工艺复杂，需要特殊的材料，使之难以应用在SOC系统中。 本文针对以上原因，设计适合于SOC系统集成的OTP存储器。本文针对深亚微米工艺下OTP存储器的编程问题，进行了电荷泵系统的设计，为OTP存储器烧录时提供编程高压。在设计电荷泵系统时以如何产生位线编程电压为主线。首先对常用的产生高压的结构进行了分析，得出适合作为产生OTP存储器编程高压的电荷泵电路。其次对常用的经典的电荷泵类型进行了理论分析，对比它们的优缺点，再结合OTP存储器一次编程的特点，最终采用了两阈值开关电荷泵电路结构。同时在设计电荷泵系统的过程中遵循以下原则。其一，避免在编程过程中产生超过普通管子承受范围的击穿电压，保证电荷泵系统在编程过程中正常工作。其二，围绕提高编程成功率、减小芯片面积、减小烧录时位线电压纹波进行设计。其三，，提高编程结点的读出范围，避免基本单元击穿后阻值的非线性导致存储数据误读。 设计出的电荷泵系统，在仿真时具有以下特点，内部高压结点低于普通CMOS管的介质击穿电压，编程时位线电压纹波小，整个芯片编程成功率高，数据读出范围大。最终设计的OTP存储器电荷泵系统在商用工艺上得到了流片验证，设计的OTP存储器能正确编程。
[Abstract]:OTP memory, that is, primary programmable memory, has the characteristics of permanent data storage, low power consumption, simple structure, fast speed and so on. Therefore, it is widely used as embedded memory in SOC system to store system configuration information and parameter values. Calibration tables, codes, etc., do not need to exchange or exchange very low frequency of data. At present, there are two kinds of OTP memory in the market, fuse type and anti-fuse type. The traditional OTP memory has complex fabrication process and needs special materials, which makes it difficult to be applied in SOC system. For the above reasons, this paper designs a OTP memory suitable for SOC system integration. Aiming at the programming problem of OTP memory in deep submicron process, the charge pump system is designed in this paper, which provides programming high voltage for OTP memory burning. How to generate bit line programming voltage is the main line in the design of charge pump system. Firstly, the common structure of generating high voltage is analyzed, and the charge pump circuit which is suitable for generating high voltage of OTP memory programming is obtained. Secondly, the classical charge pump types are analyzed theoretically, and their advantages and disadvantages are compared. combined with the characteristics of OTP memory programming, the circuit structure of two threshold switching charge pump is finally adopted. At the same time, the following principles are followed in the design of charge pump system. First, to avoid the breakdown voltage beyond the common pipe bearing range in the programming process, to ensure the normal operation of the charge pump system in the programming process. Secondly, the design is carried out to improve the success rate of programming, reduce the chip area and reduce the voltage ripples of burning time line. Thirdly, the readout range of programming nodes is improved, and the nonlinear resistance value of the basic unit after breakdown leads to the misreading of the stored data. The designed charge pump system has the following characteristics in simulation: the internal high voltage node is lower than the dielectric breakdown voltage of the ordinary CMOS tube, the voltage grain of the programming timing line is small, the success rate of the whole chip programming is high, and the data readout range is wide. Finally, the OTP memory charge pump system has been verified by the commercial process, and the designed OTP memory can be programmed correctly.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333;TN47
本文编号：2493246
[Abstract]:OTP memory, that is, primary programmable memory, has the characteristics of permanent data storage, low power consumption, simple structure, fast speed and so on. Therefore, it is widely used as embedded memory in SOC system to store system configuration information and parameter values. Calibration tables, codes, etc., do not need to exchange or exchange very low frequency of data. At present, there are two kinds of OTP memory in the market, fuse type and anti-fuse type. The traditional OTP memory has complex fabrication process and needs special materials, which makes it difficult to be applied in SOC system. For the above reasons, this paper designs a OTP memory suitable for SOC system integration. Aiming at the programming problem of OTP memory in deep submicron process, the charge pump system is designed in this paper, which provides programming high voltage for OTP memory burning. How to generate bit line programming voltage is the main line in the design of charge pump system. Firstly, the common structure of generating high voltage is analyzed, and the charge pump circuit which is suitable for generating high voltage of OTP memory programming is obtained. Secondly, the classical charge pump types are analyzed theoretically, and their advantages and disadvantages are compared. combined with the characteristics of OTP memory programming, the circuit structure of two threshold switching charge pump is finally adopted. At the same time, the following principles are followed in the design of charge pump system. First, to avoid the breakdown voltage beyond the common pipe bearing range in the programming process, to ensure the normal operation of the charge pump system in the programming process. Secondly, the design is carried out to improve the success rate of programming, reduce the chip area and reduce the voltage ripples of burning time line. Thirdly, the readout range of programming nodes is improved, and the nonlinear resistance value of the basic unit after breakdown leads to the misreading of the stored data. The designed charge pump system has the following characteristics in simulation: the internal high voltage node is lower than the dielectric breakdown voltage of the ordinary CMOS tube, the voltage grain of the programming timing line is small, the success rate of the whole chip programming is high, and the data readout range is wide. Finally, the OTP memory charge pump system has been verified by the commercial process, and the designed OTP memory can be programmed correctly.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333;TN47
【共引文献】
相关硕士学位论文 前1条
1 杨清宝;嵌入式SRAM的高速、低功耗设计及优化[D];西安电子科技大学;2007年
本文编号：2493246
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