Resistance modulation in Ge 2 Sb 2 Te 5

发布时间：2021-04-06 06:40

　　Chalcogenide based phase change random access memory（PCRAM） holds great promise for high speed and large data storage applications.This memory is scalable,requires a low switching energy,has a high endurance,has fast switching speed,and is nonvolatile.However,decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory.Here we demonstrate high speed and high endurance ultrafast transient switching in the SET st... 

【文章来源】：Journal of Materials Science & Technology. 2020,50(15)EISCICSCD

【文章页数】：7 页


本文编号：3120969