Asymmetric resistive switching processes in W:AlO x /WO y bi

发布时间：2021-08-13 11:45

　　Asymmetric resistive switching processes were observed in W:Al O x/WO y bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under-1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:Al O x/WO y devic... 

【文章来源】：Chinese Physics B. 2015,24(05)EI

【文章页数】：5 页


本文编号：3340371