Variation tolerance for high-speed negative capacitance FinF
发布时间:2021-08-13 16:32
Negative capacitance FinFET(NC-FinFET) has a promising developmental prospect due to its superior performance in SS < 60 mV/dec(subthreshold swing), especially in SRAM. Noise margin is an important metric to evaluate the performance for SRAM, together with static leakage, read speed, etc. In this paper, we study the effects of the variation of ferroelectric material(thickness, polarization), FinFET critical physical parameters(fin number, channel length) and some ambient factors(working tempe...
【文章来源】:Journal of Semiconductors. 2020,41(06)CSCD
【文章页数】:6 页
本文编号:3340768
【文章来源】:Journal of Semiconductors. 2020,41(06)CSCD
【文章页数】:6 页
本文编号:3340768
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