MEMS中高阻硅基底微小结构制造误差的反演规律研究

发布时间：2018-08-31 14:32

【摘要】：微小结构加工技术制造的微带贴片天线,具有剖面低、体积小、重量轻、高度集成、并且能与载体共形。其作为对弹药的智能化改造的通信节点,可提高弹药打击目标的精确度,基于高阻硅基底的微小结构贴片天线损耗小,容易组阵,很大程度提高了天线的功率、增益等。目前,微小结构内部尺寸的测量还属于瓶颈技术。为解决微小结构天线尺寸测量难的问题,本文探索了基于高阻硅基底C/X/Ku波段微小结构阵列式微带贴片天线的结构尺寸与电性能之间的反演规律,主要工作如下:1.C/X/Ku波段天线的基本设计与仿真。本课题主要以三个不同波段的微带天线作为研究对象,在进行反演规律分析前先要通过设计仿真,将三个不同波段天线的电性能调整到最优点。2.C/X/Ku波段天线结构尺寸误差与电性能之间反演规律的研究。在天线加工制造过程中,不可避免的产生加工尺寸误差,这些误差会影响到天线的电性能如:辐射增益、电压驻波比、回波损耗系数、辐射效率等。采用仿真软件,模拟不同波段天线的电性能和几何尺寸变化之间的对应关系。3.确定天线关键制造误差尺寸和误差允许的最大值。通过电性能和天线几何尺寸之间的关系,找出导致天线电性能变化最敏感甚至失效的关键制造误差尺寸和关键误差尺寸允许误差的大小,建立关键误差尺寸和天线电性能之间的函数关系式。并且将关键误差尺寸的值在加工过程中提供误差参考数据。4.MEMS加工工艺的研究。参照反演规律结论,深入研究了MEMS中的刻蚀工艺、溅射与电镀复合工艺、高阻硅切割工艺、微小结构的封装工艺,突破了工艺难点,制造出C/X/Ku波段微带天线样品。5.微带天线电性能的测试。通过在微波暗室内对制造出的天线进行电性能测试,用测试结果验证反演规律,并利用反演规律结论得到天线样品的误差关键尺寸的实际值。
[Abstract]:The microstrip patch antenna fabricated by micro-structure machining technology has the advantages of low profile, small volume, light weight, high integration, and conformal with the carrier. As an intelligent communication node of ammunition, it can improve the precision of ammunition hitting target. The micro-structure patch antenna based on high resistance silicon substrate has low loss and easy to group array, which greatly improves the power and gain of antenna. At present, the measurement of the internal dimensions of micro structures is still a bottleneck technology. In order to solve the problem of the measurement of the microstructural antenna size, the inversion law between the structure size and the electrical performance of the microstrip patch antenna based on the C/X/Ku band microstrip patch antenna with high resistance silicon substrate is explored in this paper. The main work is as follows: 1. The basic design and simulation of the X / Ku band antenna. This topic mainly takes three different band microstrip antennas as the research object, before carrying on the inversion law analysis, must first design the simulation, The electrical performance of three antennas in different bands is adjusted to the best. 2. The inversion law between the structure dimension error and the electrical performance of the antenna in the X / Ku band of C / R / X / Ku band is studied. In the process of antenna manufacturing, machining dimension errors will inevitably occur, which will affect the antenna electrical performance such as radiation gain, voltage standing wave ratio, echo loss coefficient, radiation efficiency and so on. Simulation software is used to simulate the corresponding relation between the electrical performance and geometric size of antenna in different bands. Determine the antenna key manufacturing error size and the maximum allowable error. According to the relationship between electrical performance and antenna geometry size, the critical manufacturing error size and the allowable error size of critical error size which lead to the most sensitive or even invalid electrical performance of antenna are found out. The functional relationship between the key error size and the electrical performance of the antenna is established. The value of key error dimension is used to provide error reference data during machining. 4. Research on MEMS machining process. Referring to the conclusion of inversion rule, the etching process, sputtering and electroplating technology, high resistance silicon cutting technology and encapsulation technology of micro structure in MEMS are studied in depth. The microstrip antenna sample of C/X/Ku band has been fabricated. Measurement of electrical properties of microstrip antennas. By testing the electrical performance of the antenna in the microwave darkroom, the inversion law is verified by the test results, and the actual value of the key error size of the antenna sample is obtained by the conclusion of the inversion rule.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN822

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