TMIn流量对GaN基蓝光LED外延薄膜的影响

发布时间：2018-01-08 02:22

本文关键词：TMIn流量对GaN基蓝光LED外延薄膜的影响　出处：《人工晶体学报》2017年06期 　论文类型：期刊论文

【摘要】：以蓝宝石(Al_2O_3)为衬底,采用有机金属化学气相沉积(MOCVD)技术生长InGaN/GaN多量子阱结构。本文通过调整外延生长过程中三甲基铟(TMIn)流量,研究了TMIn流量对InGaN/GaN多量子阱结构的合金组分、晶体质量和光学性质的影响。本文采用高分辨X射线衍射(HRXRD)、原子力显微镜(AFM)和光致发光(PL)测试表征其结构和光学性质。HRXRD测试结果表明,随TMIn流量增加,"0"级峰与GaN峰之间角偏离增大,更多的In并入薄膜中。HRXRD与AFM表征结果表明:增大TMIn流量会导致外延薄膜中的位错密度增大,V形坑数量增加,晶体质量严重恶化;PL测试结果表明,随着TMIn流量增加,发光强度逐渐降低,半高宽增大,这是由于晶体质量恶化所导致。因此严格控制铟源流量对于改善量子阱薄膜的晶体质量与光学性质有着至关重要的作用。
[Abstract]:The sapphire (Al_2O_3) substrate by metal organic chemical vapor deposition (MOCVD) growth of InGaN/GaN multi quantum well structure. The growth of three methyl indium by adjusting the epitaxial process flow (TMIn), on the TMIn flow on InGaN/GaN multiple quantum well structures of alloy components, and affect the quality of the optical properties of the crystal. In this paper, using high resolution X ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL) characterization of the structure and optical properties of the.HRXRD test results showed that with the increase of TMIn flow rate, the deviation between 0 level peak and GaN peak angle increases, more In into.HRXRD and the characterization of AFM thin films show: TMIn flow will lead to dislocation density in epitaxial thin films increase, V pits increased, the crystal quality deterioration; PL test results show that with the increase of TMIn flow rate, the luminescence intensity gradually decreased, the half width increases, this is due to the crystal Therefore, the strict control of the indium flow rate is very important for improving the crystal quality and optical properties of the quantum well film.

【作者单位】：太原理工大学新材料界面科学与工程教育部重点实验室;太原理工大学新材料工程技术研究中心;太原理工大学材料科学与工程学院;
【基金】：国家自然科学基金(51672185,61604104,61504090)
【分类号】：O471.1;O484
【正文快照】： 1引言Ⅲ-Ⅴ族半导体材料具有宽带隙、发光效率高、耐高温以及化学性质稳定等优点,尤其是In Ga N/Ga N多量子阱结构,其输出波长涵盖了可见光到紫外光的发光范围,已被广泛应用于紫外、蓝光、绿光LED和激光器的有源层[1,2]。研究发现通过改变In Ga N/Ga N多量子阱结构的厚度和量

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