一种非矩形截面对浅刻蚀SOI脊形波导侧向泄漏损耗的影响

发布时间：2018-01-10 08:04

本文关键词：一种非矩形截面对浅刻蚀SOI脊形波导侧向泄漏损耗的影响　出处：《光子学报》2017年07期 　论文类型：期刊论文

【摘要】：为了进一步探索用绝缘体上晶体硅制作的浅刻蚀脊形波导侧向泄漏损耗的规律,提出并研究了一种非矩形截面浅刻蚀绝缘体上晶体硅脊形波导.用光的干涉理论建立该波导的周期性损耗模型并推导出损耗周期公式,然后通过完美匹配层边界条件下的频域有限元法仿真观察该特殊波导类TM0模的侧向泄漏损耗周期的变化与最大损耗点的偏移现象.周期大小的仿真结果与理论计算符合度较高,其平均相对误差仅0.56%.此外,发现该类波导在某些沟槽宽度下可以通过改变截面来实现对类TM0模损耗从最大到最小的调节,而在另外一些沟槽宽度下,类TM0模损耗对截面变化不敏感.研究结果可以简化波导加工并提高制作容差,为该类型波导的设计与制作提供参考.
[Abstract]:In order to further explore the rule of lateral leakage loss of shallow etched ridge waveguide made of silicon crystal on insulator. A silicon ridge waveguide with non-rectangular cross-section is proposed and studied. The periodic loss model of the waveguide is established by using the interference theory of light and the periodic loss formula is derived. Then the frequency domain finite element method under perfectly matched layer boundary condition is used to simulate and observe the variation of the lateral leakage loss period and the maximum loss point migration of the special waveguide TM0 mode. The degree of calculation coincidence is high. The average relative error is only 0.56.Furthermore, it is found that this kind of waveguide can adjust the TM0 mode loss from maximum to minimum by changing the cross section of some grooves. In some other grooves, the TM0 mode loss is insensitive to cross-section changes. The results can simplify the fabrication of waveguides and increase the fabrication tolerances, and provide a reference for the design and fabrication of this type of waveguides.
【作者单位】：浙江工业大学理学院;
【基金】：浙江省自然科学基金(No.LY16F050008)资助~~
【分类号】：TN252
【正文快照】： 0引言贝尔实验室在加载条状波导的基础上提出了脊形波导的概念[1],这种脊形波导被广泛用于定向耦合器、1-3003270调制器及偏振器中.损耗是决定波导性能重要的参量之一,而侧向泄漏是脊形波导损耗的主要原因.PENGS等最先在理论上预测了脊形波导损耗周期性变化的谐振效应[2],随后

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