退火工艺对含硅量子点SiC_x薄膜光谱特性的影响

发布时间：2018-01-10 11:26

  本文关键词：退火工艺对含硅量子点SiC_x薄膜光谱特性的影响　出处：《光学学报》2017年01期 　论文类型：期刊论文

  更多相关文章： 薄膜 硅量子点 富硅SiCx薄膜 微波退火 结晶 光致发光

【摘要】：采用磁控共溅射法并结合微波退火和快速光热退火工艺,在不同退火温度下制备了含硅量子点的富硅SiC_x薄膜。采用掠入射X射线衍射(GIXRD)、拉曼光谱和光致发光(PL)光谱技术对薄膜进行了表征,研究了退火工艺对薄膜中硅量子点数量、尺寸、晶化率以及发光峰的影响。结果表明:与快速光热退火相比,微波退火不但能降低硅量子点的形成温度(降低200℃),而且还能降低β-SiC量子点的形成温度(降低100℃);在相同退火温度下,微波退火制备的硅量子点的数量更多、晶化率更高、光致发光峰更强;采用1000℃温度的微波退火样品的硅量子点数量最多、尺寸最大(5.26nm)、晶化率最高(74.25%)、发光峰最强,说明微波退火能凝析出高质量的硅量子点。
[Abstract]:Si-rich SiC_x thin films containing silicon quantum dots were prepared by magnetron co-sputtering and microwave annealing and rapid photothermal annealing at different annealing temperatures, and grazing incident X-ray diffraction (GIXRD) was used. Raman spectra and photoluminescence (PL) spectra were used to characterize the films. The effects of annealing process on the number and size of silicon quantum dots in the films were studied. The results show that microwave annealing can not only reduce the formation temperature of silicon quantum dots (200 鈩，

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