低入射能量下电介质样品出射电子特性

发布时间：2018-01-11 12:30

本文关键词：低入射能量下电介质样品出射电子特性　出处：《固体电子学研究与进展》2017年05期 　论文类型：期刊论文

【摘要】：近年来,低入射能量下电介质样品出射电子特性研究在电子显微成像、电子束曝光等领域得到了广泛关注。结合数值计算和实验测量,研究和分析了石英样品出射电子电流的动态变化特性及相关因素的影响。结果表明,二次电子能谱的峰值半宽度比金属样品要小,几率最大的出射能量约为2 e V。随着电子束持续照射,表面电位逐渐下降并趋于稳定,二次电子电流逐渐增大至稳定值,背散射电子电流基本保持不变。稳态二次电子电流和背散射电子电流随入射能量的变化基本保持不变,二者随束流增大近似线性增大。样品台偏压越高,二次电子电流越小,背散射电子电流基本不变。
[Abstract]:In recent years, the study on the emission electron characteristics of dielectric samples at low incident energy has received extensive attention in the fields of electron microscopic imaging, electron beam exposure and so on, combined with numerical calculation and experimental measurement. The dynamic characteristics of the exiting electron current of quartz samples and the influence of related factors are studied and analyzed. The results show that the peak half width of the secondary electron energy spectrum is smaller than that of the metal sample. The maximum emission energy is about 2 EV. With the continuous irradiation of the electron beam, the surface potential decreases and tends to stabilize, and the secondary electron current gradually increases to the stable value. The steady-state secondary electron current and backscatter electron current change with the incident energy basically, and they increase linearly with the increase of beam current. The bias voltage of the sample station is higher. The smaller the secondary electron current, the less the backscattered electron current is.
【作者单位】：西安理工大学自动化与信息工程学院;西安交通大学电子科学与技术系;
【基金】：陕西省自然科学基金资助项目(2015JM6348) 陕西省教育厅科研计划项目(15JK1509) 西安理工大学科研计划项目(2015CX030)
【分类号】：O46
【正文快照】： ***引言当具有一定能量的电子束照射到样品时,会与样品原子或分子发生复杂的碰撞,激发出大量的次级电子,包括二次电子(能量低于50 e V)和背散射电子(能量高于50 e V)。部分次级电子会从表面出射形成出射电子电流。由于受到材料特性的影响,出射电子电流携带有材料的相关信息,使

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