P-N结型耗尽沟道的势垒高度解析模型

发布时间：2018-01-11 13:25

本文关键词：P-N结型耗尽沟道的势垒高度解析模型　出处：《科学通报》2017年Z2期 　论文类型：期刊论文

【摘要】：P-N结型耗尽沟道的电流输运取决于沟道中的势垒高度,本文构建了沟道势垒模型,基于器件物理分析给出了势垒高度的解析表达式.该模型对沟道内和沟道外耗尽区的边界条件做了合理的假设和分析,通过求解泊松方程获得上述两个区域的电势分布,将这两个区域的电势分布综合起来推导出了势垒高度的解析表达式.该表达式较为完整地反映了势垒高度与器件材料参数、结构参数及外加偏压的关系.将解析模型与数值模拟结果做了比较,两者吻合很好.该模型的构建对于分析具有P-N结型耗尽沟道的半导体器件有重要意义.
[Abstract]:The current transport of P-N junction depletion channel depends on the barrier height in the channel. In this paper, the channel barrier model is constructed. The analytical expression of the barrier height is given based on the device physical analysis. The model makes reasonable assumptions and analyses for the boundary conditions of the depletion region in and out of the channel. The potential distribution of the above two regions is obtained by solving Poisson equation. The analytical expression of barrier height is derived by synthesizing the potential distribution of these two regions, which completely reflects the barrier height and device material parameters. The relationship between the structural parameters and the applied bias voltage. The analytical model is in good agreement with the numerical simulation results. The construction of the model is of great significance for the analysis of semiconductor devices with P-N junction depletion channels.
【作者单位】：兰州大学物理科学与技术学院微电子研究所;
【分类号】：O475
【正文快照】： P-N结的正反偏性质在双极结型晶体管(bipolarjunction transistor,BJT)和场效应晶体管(field-effecttransistor,FET)中得到了很大应用.其中,BJT和金属-绝缘体-半导体场效应晶体管(mental-insulator-semi-conductor FET,MISFET)利用了P-N结耗尽层的关断作用:BJT是利用P-N结正偏

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