多晶硅薄膜电学输运理论的研究进展

发布时间：2018-01-15 08:15

本文关键词：多晶硅薄膜电学输运理论的研究进展　出处：《中山大学学报(自然科学版)》2017年04期 　论文类型：期刊论文

【摘要】：多晶硅薄膜已广泛应用于平板显示、微机电系统和集成电路等领域,在太阳电池和平板系统领域也有着巨大的应用前景。由于多晶硅薄膜存在晶界,晶界内的晶体缺陷和悬挂键会向带隙中引入界面态,界面态一方面会束缚载流子并形成势垒阻碍载流子的传输,另一方面会作为有效复合中心加重载流子的复合,因此,多晶硅薄膜上制备的器件的性能要低于与之对应的单晶硅薄膜器件的性能。为了从理论上阐明暗场和光照条件下多晶硅薄膜的电学性质,人们已发展了各种理论模型。此外,为了确定晶界界面态在带隙中的分布,人们已发展出分析法和计算机模拟两种方法。本文将简要概述人们在多晶硅薄膜电学输运理论和晶界界面态分布确定方法等方面的主要研究进展,以期对从事多晶硅薄膜或多晶半导体输运性质研究的科研工作者有所参考和启发。
[Abstract]:Polycrystalline silicon thin films have been widely used in the fields of flat panel display, micro electromechanical systems and integrated circuits, and also have great application prospects in solar cells and flat panel systems, due to the existence of grain boundaries of polysilicon thin films. The crystal defects and hanging bonds in the grain boundaries introduce interfacial states into the band gap. On the one hand, the interfacial states will bind the carriers and form barriers to block the carrier transport. On the other hand, it will serve as an effective recombination center to accentuate the carrier recombination, thus. The properties of the devices fabricated on the polycrystalline silicon thin films are lower than those of the corresponding monocrystalline silicon thin film devices. In order to clarify the electrical properties of the polycrystalline silicon films under dark field and illumination conditions theoretically. Various theoretical models have been developed. In addition, in order to determine the distribution of grain boundary interface states in the band gap. Two methods, analytical method and computer simulation method, have been developed. In this paper, the main research progress in the field of electrical transport theory of polycrystalline silicon thin films and the determination of interfacial distribution at grain boundaries are briefly reviewed. In order to provide reference and inspiration for researchers engaged in the study of the transport properties of polycrystalline silicon thin films or polycrystalline semiconductors.
【作者单位】：中山大学物理学院;广东省光伏技术重点实验室;中山大学材料科学与工程学院;
【基金】：广东省科技计划项目(2011A032304001,2013B010405011)
【分类号】：O484.42
【正文快照】： 由于可以在多种衬底上大面积制备器件级多晶硅薄膜,而且能够制成高质量n沟道或p沟道薄膜晶体管(TFTs),所以多晶硅薄膜在平板显示(FPDs)、微机电系统(MEMS)和集成电路(ICs)等领域已获得了广泛的应用[1-5],此外,多晶硅薄膜在太阳电池和平板系统(SOP:system onpanel)等领域也有着

【相似文献】