电子有效质量随位置变化对半导体量子点杂质态结合能的影响

发布时间：2018-03-06 10:48

本文选题：量子点　切入点：杂质态　出处：《内蒙古大学学报(自然科学版)》2017年01期 　论文类型：期刊论文

【摘要】：在连续介电模型和有效质量近似下,考虑电子有效质量随位置的变化,利用变分法从理论上研究了半导体有限高势垒球形量子点中杂质态的结合能.数值计算了AlxGa1-xAs/GaAs球形量子点杂质态基态结合能随量子点尺寸和垒材料Al组分的变化关系,讨论了有效质量随位置变化对基态结合能的影响,并与不考虑有效质量随位置变化做了比较.结果表明:当量子点半径较小时,电子有效质量随位置的变化增加了杂质态基态结合能,随量子点半径增大,杂质态基态结合能的增加幅度变小;量子点半径较大时,电子有效质量随位置变化降低了杂质态基态结合能.随着Al组分增大,杂质态基态结合能单调递增.
[Abstract]:In the continuous dielectric model and the effective mass approximation, the change of the effective mass of the electron with the position is considered. The binding energy of impurity states in semiconductor finite high barrier spherical quantum dots is theoretically studied by variational method. The dependence of ground state binding energies of impurity states in AlxGa1-xAs/GaAs spherical quantum dots on the size of quantum dots and Al composition of barrier materials is numerically calculated. The effect of the effective mass with the position on the binding energy of the ground state is discussed and compared with that without considering the effective mass with the position. The results show that when the radius of the quantum dot is small, The binding energy of the ground state of impurity state increases with the change of the effective mass of the electron. The increase of the binding energy of the ground state of the impurity state becomes smaller with the increase of the radius of the quantum dot, and when the radius of the quantum dot is larger, The binding energy of the ground state decreases with the change of the effective mass of the electron, and increases monotonously with the increase of the Al component.
【作者单位】：内蒙古农业大学理学院;
【基金】：国家自然科学基金资助项目(No.1364028) 内蒙古自然科学基金重大项目(No.2013ZD02)资助内蒙古"草原英才"工程资助项目
【分类号】：O471.1

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