高掺铒硅基氧化钽脊形光波导

发布时间：2018-03-13 22:24

本文选题：集成光学　切入点：铒掺杂　出处：《红外与激光工程》2017年08期 　论文类型：期刊论文

【摘要】：首次提出了采用Er-Ta共溅、高温退火的方法,在硅基二氧化硅表面制备高掺铒氧化钽(Er:Ta_2O_5)薄膜。利用棱镜耦合仪分析了铒掺杂浓度对Er:Ta_2O_5薄膜的折射率的影响,结果表明:Er:Ta_2O_5薄膜的折射率随着Er掺杂浓度的增加而略微降低,且所制备的薄膜没有明显的各向异性。在此基础上,成功制备出Er掺杂浓度分别为0、2.5、5、7.5 mol%的硅基Er:Ta_2O_5脊形波导,波导在1 550 nm波段可实现单模传输,通过截断法得到波导在1 600 nm波长处的传输损耗分别为0.6、1.1、2.5、5.0 d B/cm。在所制备的Er:Ta_2O_5薄膜中,尽管没有发现Er_2O_3结晶析出,但薄膜中的Er3+会影响Ta_2O_5晶体的结晶程度,进而增加波导的传输损耗。最终文中制备的掺杂浓度为2.5 mol%的硅基Er:Ta_2O_5脊形波导通过980 nm激光泵浦,在1 531 nm信号波长下达到了3.1 d B/cm的净增益。
[Abstract]:Er-Ta co-splashing and high temperature annealing have been proposed for the first time to prepare er _ 2O _ 2 thin films with high erbium doped tantalum oxide (er _ 2O _ 2O _ 5) on silica substrate. The effect of erbium doped concentration on the refractive index of Er:Ta_2O_5 films has been analyzed by means of prism coupling instrument. The results show that the refractive index decreases slightly with the increase of er doping concentration, and there is no obvious anisotropy in the prepared thin films. On the basis of this, a silicon-based Er:Ta_2O_5 ridge waveguide with er doping concentration of 0.2.5% or 57.5 mol% has been successfully fabricated. The waveguide can transmit at 1 550 nm. The transmission loss at 1 600 nm can be obtained by truncation method. The transmission loss of the waveguide at the wavelength of 1 600 nm is 0. 6 ~ 1. 1 / 2. 5 ~ 5. 0 dB / cm ~ (-1) respectively. In the prepared Er:Ta_2O_5 films, the crystallization of Er_2O_3 is not found. However, the Er3 in the film will affect the crystallization of Ta_2O_5 crystal and increase the transmission loss of the waveguide. Finally, the silicon based Er:Ta_2O_5 ridged waveguide with 2.5 mol% doping concentration is pumped by a 980nm laser. The net gain of 3.1 dB / cm was obtained at the wavelength of 1 531 nm.
【作者单位】：天津大学精密仪器与光电子工程学院;天津科技大学应用文理学院;
【分类号】：TN252

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