O波段8通道硅基二氧化硅平坦化阵列波导光栅的设计及制备

发布时间：2018-03-22 04:17

本文选题：阵列波导光栅　切入点：波分复用　出处：《光子学报》2017年08期 　论文类型：期刊论文

【摘要】：设计并制作了一款应用于IEEE 200/400GbE标准802.3bs的阵列波导光栅.该阵列波导光栅使用2.0%的超高折射率差硅基二氧化硅材料,使得芯片尺寸及损耗较小.为了获得平坦化的接收光谱,将输出波导进行展宽,采用多模波导结构,激发若干个高阶模,数个模式叠加使得原本高斯状的光谱顶部产生平坦化,形成箱形接收光谱.设计的阵列波导光栅的中心波长为1 291.10nm,通道间隔为800GHz,芯片尺寸为11mm×4mm.经过等离子增强化学气相沉积和感应耦合等离子刻蚀工艺制备了芯片,测试结果表明最小的插入损耗为-3.3dB,相邻通道间串扰小于-20dB,单通道1dB带宽在2.12~3.06nm范围,实现了良好的解复用和平坦化效果,在实际光通信系统中有一定的实用价值.
[Abstract]:An arrayed waveguide grating applied to IEEE 200/400GbE standard 802.3bs is designed and fabricated. The arrayed waveguide grating uses 2.0% silica with ultra-high refractive index difference, which makes the chip size and loss smaller. The output waveguide is broadened, and the multimode waveguide structure is used to excite a number of higher-order modes. The superposition of several modes makes the top of the original Gao Si spectrum flattened. The center wavelength of the designed arrayed waveguide grating is 1 291.10 nm, the channel interval is 800 GHz, and the chip size is 11mm 脳 4 mm. The chip is fabricated by plasma enhanced chemical vapor deposition and inductively coupled plasma etching. The test results show that the minimum insertion loss is -3.3 dB, the crosstalk between adjacent channels is less than -20 dB, and the single-channel 1dB bandwidth is in the 2.12~3.06nm range, which achieves good demultiplexing and flatting effect, and has certain practical value in the practical optical communication system.
【作者单位】：中国科学院半导体研究所集成光电子学国家重点联合实验室;中国科学院大学材料科学与光电技术学院;
【基金】：国家高技术研究发展计划(No.2015AA016902) 国家自然科学基金(Nos.61435013,61405188) 集成光电子学国家重点联合实验室自主研究课题资助~~
【分类号】：TN25

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