不同工艺制备的人工节瘤的损伤生长特性
发布时间:2018-09-19 16:18
【摘要】:在高能激光系统中,反射膜的损伤生长特性和初始损伤一样重要。对薄膜损伤生长特性的研究将有助于探究反射膜损伤机制,从而进一步有效地提高其抗激光损伤能力。使用电子束蒸发(EB)和离子束辅助(IAD)两种工艺制备了1064nm波长下的Hf O2/Si O2反射膜,利用四种尺寸的单分散的Si O2小球形成人工节瘤,来研究薄膜镀制工艺和节瘤尺寸对节瘤损伤生长特性的影响。激光损伤测试结果表明:节瘤损伤生长阈值基本随节瘤尺寸的增加而减小。EB工艺制备的反射膜中,四种尺寸节瘤的损伤生长阈值都高于其初始损伤阈值,而IAD工艺制备的反射膜中结果则相反。另外,IAD工艺要比EB工艺制备的反射膜中的节瘤在发生初始损伤后更易于损伤生长,说明薄膜镀制工艺对节瘤的损伤生长速度有一定的影响。
[Abstract]:In high energy laser systems, the damage growth characteristics of the reflective film are as important as the initial damage. The study of the damage and growth characteristics of the thin film will be helpful to explore the mechanism of the damage of the reflective film and improve its ability to resist laser damage effectively. Electron beam evaporation (EB) and ion beam assisted (IAD) were used to prepare Hf O2/Si O 2 reflective film at 1064nm wavelength. Four sizes of monodisperse Si O 2 spheres were used to form artificial ganglion. To study the effect of film plating process and nodule size on the growth characteristics of ganglion damage. The results of laser damage test show that the damage growth threshold of ganglion decreases with the increase of the size of the tumor. In the reflective film prepared by EB process, the damage growth threshold of the four kinds of ganglion is higher than its initial damage threshold. However, the results of the reflective films prepared by IAD process are opposite. In addition, iad process is more likely to damage and grow after initial damage than that of EB process, which indicates that the film plating process has a certain effect on the growth rate of ganglion damage.
【作者单位】: 同济大学先进微结构材料教育部重点实验室;同济大学物理科学与工程学院精密光学工程技术研究所;中国工程物理研究院激光聚变研究中心;
【基金】:国家自然科学基金(61522506,61235011,51475335)
【分类号】:TN249
[Abstract]:In high energy laser systems, the damage growth characteristics of the reflective film are as important as the initial damage. The study of the damage and growth characteristics of the thin film will be helpful to explore the mechanism of the damage of the reflective film and improve its ability to resist laser damage effectively. Electron beam evaporation (EB) and ion beam assisted (IAD) were used to prepare Hf O2/Si O 2 reflective film at 1064nm wavelength. Four sizes of monodisperse Si O 2 spheres were used to form artificial ganglion. To study the effect of film plating process and nodule size on the growth characteristics of ganglion damage. The results of laser damage test show that the damage growth threshold of ganglion decreases with the increase of the size of the tumor. In the reflective film prepared by EB process, the damage growth threshold of the four kinds of ganglion is higher than its initial damage threshold. However, the results of the reflective films prepared by IAD process are opposite. In addition, iad process is more likely to damage and grow after initial damage than that of EB process, which indicates that the film plating process has a certain effect on the growth rate of ganglion damage.
【作者单位】: 同济大学先进微结构材料教育部重点实验室;同济大学物理科学与工程学院精密光学工程技术研究所;中国工程物理研究院激光聚变研究中心;
【基金】:国家自然科学基金(61522506,61235011,51475335)
【分类号】:TN249
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