筒内高功率脉冲磁控放电的电磁控制与优化
发布时间：2018-11-11 18:46
【摘要】：高功率脉冲磁控溅射(Hi PIMS)技术被提出以来就受到广泛关注,其较高的溅射材料离化率结合适当的电磁控制,可产生高致密度、高结合力和高综合性能的涂层,但其沉积速率低、放电不稳定、溅射材料离化率差异较大.我们设计了一种筒形溅射源,通过对结构的设计优化,利用类空心阴极放电效应,使问题得到解决.然而其靶面切向磁场不均匀,电子逃逸严重,进而造成等离子体密度偏低,且放电不均匀.本文通过对其放电和等离子体分布进行仿真,提出电场阻挡和磁铁补偿两种方案,研究了不同电场控制条件下的放电行为和等离子体分布.结果表明:增加电子阻挡屏极可以生成势阱,从而有效抑制电子从边缘的逸出;优化后的磁铁补偿可以显著提高靶面横向磁场的均匀性及靶面利用率.两种方案同时作用时,Hi PIMS放电刻蚀环面积更大、且更加均匀.
[Abstract]:High power pulsed magnetron sputtering (Hi PIMS) technology has been widely concerned since it was proposed. Its high ionization rate of sputtering materials combined with appropriate electromagnetic control can produce high density, high adhesion and high performance coatings. However, the deposition rate is low, the discharge is unstable, and the ionization rate of sputtering materials varies greatly. We have designed a cylindrical sputtering source and solved the problem by optimizing the structure and utilizing the discharge effect of hollow cathode. However, the tangential magnetic field on the target surface is not uniform, and the electron escape is serious, which leads to the low plasma density and uneven discharge. Based on the simulation of the discharge and plasma distribution, two schemes of electric field barrier and magnet compensation are proposed in this paper. The discharge behavior and plasma distribution under different electric field control conditions are studied. The results show that the potential well can be generated by increasing the electron barrier electrode, which can effectively restrain the electron escaping from the edge, and the optimized magnet compensation can significantly improve the uniformity of the transverse magnetic field and the utilization ratio of the target surface. When the two schemes act simultaneously, the area of the, Hi PIMS discharge etching ring is larger and more uniform.
【作者单位】： 北京大学深圳研究生院新材料学院;香港城市大学物理与材料科学系;
【基金】：国家材料基因组计划(批准号:2016YFB0700600) 国家自然科学基金(批准号:51301004) 深圳科技研究基金(批准号:JCYJ20140903102215536,JCYJ20150828093127698) 香港城市大学应用研究基金(批准号:9667122)资助的课题~~
【分类号】：O461
本文编号：2325783
[Abstract]:High power pulsed magnetron sputtering (Hi PIMS) technology has been widely concerned since it was proposed. Its high ionization rate of sputtering materials combined with appropriate electromagnetic control can produce high density, high adhesion and high performance coatings. However, the deposition rate is low, the discharge is unstable, and the ionization rate of sputtering materials varies greatly. We have designed a cylindrical sputtering source and solved the problem by optimizing the structure and utilizing the discharge effect of hollow cathode. However, the tangential magnetic field on the target surface is not uniform, and the electron escape is serious, which leads to the low plasma density and uneven discharge. Based on the simulation of the discharge and plasma distribution, two schemes of electric field barrier and magnet compensation are proposed in this paper. The discharge behavior and plasma distribution under different electric field control conditions are studied. The results show that the potential well can be generated by increasing the electron barrier electrode, which can effectively restrain the electron escaping from the edge, and the optimized magnet compensation can significantly improve the uniformity of the transverse magnetic field and the utilization ratio of the target surface. When the two schemes act simultaneously, the area of the, Hi PIMS discharge etching ring is larger and more uniform.
【作者单位】： 北京大学深圳研究生院新材料学院;香港城市大学物理与材料科学系;
【基金】：国家材料基因组计划(批准号:2016YFB0700600) 国家自然科学基金(批准号:51301004) 深圳科技研究基金(批准号:JCYJ20140903102215536,JCYJ20150828093127698) 香港城市大学应用研究基金(批准号:9667122)资助的课题~~
【分类号】：O461
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