一种新的超导储能磁体结构优化方法

发布时间：2018-12-30 16:25

【摘要】：高温超导线材的各向异性一直影响其在工程中的使用性能,临界电流主要受磁体最大垂直磁场(垂直于带材表面)决定,最大应力通常出现在最大轴向磁场(平行于带材表面)处.文章针对单螺线管超导储能磁体,从增大临界电流和减小机械应力两方面出发,提出一种新的超导储能磁体结构优化方法.利用MATLAB从不同径高比(平均半径/高)着手,计算带材总长度为2000m的多组磁体结构参数,建立了单螺线管超导磁体的有限元模型,结合COMSOL仿真软件获得多组结构参数的应力、磁场分布以及磁场最大值,将承受最大应力区域的磁体转移至磁体两端中部区域.对参与转移的磁体参数进行计算,分析对比不同转移参数对磁体应力和临界电流的影响.仿真结果表明,对比常规磁体,优化后的磁体能有效减小最大垂直磁场从而增大临界电流,减小最大轴向磁场从而减小最大应力,对超导储能磁体的优化具有重要意义.
[Abstract]:The anisotropy of HTS wire has always affected its performance in engineering. The critical current is mainly determined by the maximum vertical magnetic field (perpendicular to the strip surface) of the magnet. The maximum stress usually occurs at the maximum axial magnetic field (parallel to the strip surface). In this paper, a new optimization method for superconducting energy storage magnets with single solenoid is proposed from the aspects of increasing critical current and reducing mechanical stress. By using MATLAB to calculate the structural parameters of multi-groups of magnets with total length of 2000m from different diameter-height ratios (mean radius / height), a finite element model of single-solenoid superconducting magnets is established, and the stress of multiple structural parameters is obtained by using COMSOL simulation software. The distribution of the magnetic field and the maximum value of the magnetic field transfer the magnets subjected to the maximum stress to the middle region of the two ends of the magnets. The effects of different transfer parameters on the stress and critical current of the magnets were analyzed and compared. The simulation results show that compared with conventional magnets, the optimized magnets can effectively reduce the maximum vertical magnetic field and increase the critical current, decrease the maximum axial magnetic field and thus reduce the maximum stress, which is of great significance to the optimization of superconducting energy storage magnets.
【作者单位】：四川大学电气信息学院;
【基金】：国家自然科学基金项目(51207097) 教育部博士点基金(批准号:20120181120100)资助的课题~~
【分类号】：O511.3

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