低阈值单横模852nm半导体激光器
发布时间：2019-06-10 01:38
【摘要】：基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.
[Abstract]:Based on waveguide theory and equivalent refractive index method, asymmetric waveguide isolated double-channel ridge edge-emitting lasers are designed and fabricated. Finally, a low min single base side mode 852 nm laser is obtained. The influence of the aspect ratio parameter design of different ridges on the lateral mode characteristics of the laser is studied in detail, and the stable output of the single base side mode of the ridged waveguide side emitting laser is realized without coating on the cavity surface. At the same time, the lasing wavelength can be accurately tuned to 852 nm;. The working current is up to 150 mA, the working temperature is 30 鈩，
本文编号：2496063
[Abstract]:Based on waveguide theory and equivalent refractive index method, asymmetric waveguide isolated double-channel ridge edge-emitting lasers are designed and fabricated. Finally, a low min single base side mode 852 nm laser is obtained. The influence of the aspect ratio parameter design of different ridges on the lateral mode characteristics of the laser is studied in detail, and the stable output of the single base side mode of the ridged waveguide side emitting laser is realized without coating on the cavity surface. At the same time, the lasing wavelength can be accurately tuned to 852 nm;. The working current is up to 150 mA, the working temperature is 30 鈩，
本文编号：2496063
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