基于GaAs肖特基二极管的330 GHz接收前端技术研究

发布时间：2018-08-15 14:29

【摘要】：基于GaAs肖特基二极管,设计实现了310~330 GHz的接收机前端.接收机采用330 GHz分谐波混频器作为第一级电路,为降低混频器变频损耗,提高接收机灵敏度,分析讨论了反向并联混频二极管空气桥寄生电感和互感,采用去嵌入阻抗计算方法,提取了二极管的射频、本振和中频端口阻抗,实现了混频器的优化设计,提高了变频损耗仿真精度.接收机的165 GHz本振源由×6×2倍频链实现,其中六倍频采用商用有源器件,二倍频则采用GaAs肖特基二极管实现,其被反向串联安装于悬置线上,实现了偶次平衡式倍频,所设计的倍频链在165 GHz处输出约10 dBm的功率,用以驱动330 GHz接收前端混频器.接收机第二级电路采用中频低噪声放大器,以降低系统总的噪声系数.在310~330 GHz范围内,测得接收机噪声系数小于10.5 dB,在325 GHz处测得最小噪声系数为8.5 dB,系统增益为(31±1)dB.
[Abstract]:Based on GaAs Schottky diode, a 310~330 GHz receiver front-end is designed and implemented. The 330 GHz sub-harmonic mixer is used as the first stage circuit in the receiver. In order to reduce the frequency conversion loss of the mixer and improve the sensitivity of the receiver, the parasitic inductance and mutual inductance of the air bridge of the reverse parallel mixer diode are analyzed and discussed. The RF, local oscillator and IF port impedance of diode are extracted to optimize the design of mixer and improve the simulation precision of frequency conversion loss. The 165 GHz local oscillator of receiver is realized by *6 *2 octave chain, in which the six octave frequency is realized by commercial active device and the two octave frequency is realized by GaAs Schottky diode, which is mounted in series in reverse direction. On-line, the even-order balanced frequency doubling is realized. The designed frequency doubling chain outputs about 10 dBm of power at 165 GHz to drive the 330 GHz receiving front-end mixer. The minimum noise figure at GHz is 8.5 dB, and the system gain is (31 + 1) dB..
【作者单位】：南京信息工程大学电子与信息工程学院;
【基金】：江苏省双创团队人才计划~~
【分类号】：TN851

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