硅纳米线压阻系数尺度效应建模研究

发布时间：2018-04-29 14:37

本文选题：硅纳米线 + 压阻系数　；参考：《中北大学》2017年硕士论文

【摘要】：惯性器件由MEMS向NEMS发展,器件敏感结构尺寸由微米级向纳米级转变,压阻效应的灵敏度接近了检测的极限,进一步提高灵敏度已非常困难,但是压敏电阻尺寸达到纳米量级时,其受到拉伸时电阻值发生巨大变化,可以在硅纳米线等材料中观察到。压阻效应的大小体现于压阻系数之上,硅纳米线压阻系数比常规硅压阻系数高两个数量级,微小型化程度高,优势突出。影响压阻系数的因素有掺杂浓度和几何尺寸,本文基于此对硅纳米线压阻系数尺度效应展开了研究,对不同掺杂浓度、不同尺度下的硅纳米线进行模拟仿真,并建立了压阻系数尺度模型,结果显示:硅纳米线压阻系数随着掺杂浓度增大而减小;硅纳米线压阻系数随着长度的增加而缓慢增大;硅纳米线压阻系数随着宽度(或截面积的增大)而剧烈减小。本文对文献中报道的实际制备的硅纳米线的尺寸进行模拟仿真,与测试结果进行了比对与分析,一定程度上验证了模型的正确性;通过与本组实际制备的的硅纳米线的尺寸进行模拟仿真,并与本组实测结果进行对比分析,发现本模型存在一定误差,有继续深入研究的必要性。通过本文的尺度建模研究,给以后实际加工提供理论支撑,有助于将硅纳米线用于各类纳米力敏传感器中,解决不断微型化过程中的高灵敏难题,对进一步提高力敏器件应用基础研究具有重要意义。
[Abstract]:With the development of inertial device from MEMS to NEMS, the sensitive structure size of the device changes from micron to nanometer. The sensitivity of piezoresistive effect is close to the detection limit, so it is very difficult to improve the sensitivity further, but when the size of varistor reaches nanometer order, The resistance value changes greatly when it is stretched and can be observed in silicon nanowires and other materials. The piezoresistive effect is reflected in the piezoresistive coefficient. The piezoresistive coefficient of silicon nanowires is two orders of magnitude higher than that of the conventional silicon piezoresistive coefficient. The influence factors of piezoresistive coefficient are doping concentration and geometric dimension. Based on this, the scale effect of piezoresistive coefficient of silicon nanowires is studied, and the simulation of silicon nanowires with different doping concentrations and different scales is carried out. The results show that the piezoresistive coefficient of silicon nanowires decreases with the increase of doping concentration, and the piezoresistive coefficient of silicon nanowires increases slowly with the increase of length. The piezoresistive coefficient of silicon nanowires decreases sharply with the increase of width (or cross section area). In this paper, the size of the silicon nanowires reported in the literature is simulated and compared with the test results, and the correctness of the model is verified to a certain extent. By simulating the size of silicon nanowires and comparing with the measured results, it is found that there are some errors in this model, and it is necessary to further study the model. Through the scale modeling research in this paper, it provides theoretical support for practical processing, and helps to use silicon nanowires in various kinds of nanoscale force sensors to solve the problem of high sensitivity in the process of continuous miniaturization. It is of great significance to further improve the basic research on the application of force sensitive devices.
【学位授予单位】：中北大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TB383.1;TP212

【参考文献】