300nm GaN基半导体激光器结构研究

发布时间：2018-03-10 17:13

本文选题：AlGaN　切入点：Silvaco　出处：《郑州大学》2017年硕士论文　论文类型：学位论文

【摘要】：G GaN基材料是Si、GaAs之后的第三代半导体材料,具有禁带宽度大、电子迁移率高等特性,相关的合金材料属于直接带隙半导体,材料发光效率高,又因其禁带宽度范围约为0.7~6.2eV,包含了从可见光绿光、蓝光、紫光到紫外光的宽波长范围,适合用于制备光学器件。半导体激光器的器件结构紧凑,可以在很小体积下实现激光激射,同时具有发光效率高、响应速度快以及使用寿命长等特点,在信息通信、激光显示、水下探测、生物科学以及军事领域如激光雷达等领域有广泛的应用。本文所研究的波长为300nm的GaN基半导体激光器属于深紫外范围,可以应用在生物探测、医疗杀菌、导弹预警、卫星加密通信等领域,具有很广阔的应用前景。本文简述了半导体激光器的研究背景、应用以及基本原理,建立了数值计算模型,用于研究器件结构与特性的关系。。首先设计了具有简单双异质结的300nm波长激光器结构(结构A),,仿真结果表明,该器件的阈值电流为1.092A,阈值电压为6.052V,斜率效率为0.042W/A。但是,这种简单结构的激光器侧模分布范围大;因此,对结构A进行改进,增加了脊型结构(结构B),仿真结果表明,结构B的光场侧模分布比结构A的情形更密集,,但阈值电压提升了16%;为了提升激光器整体性能,引入了量子阱结构(结构C),仿真结果表明,与结构B比较,结构C的激光器阈值电流减少39.5%,斜率效率提升116.7%,整体性能比之前有较大提升;随后引入电子阻挡层(结构D)来提升激光器性能,与结构C相比,结构C的激光器结构将斜率效率提升了19.8%;最后,使用组分渐变层设计(结构E)进一步提升激光器的性能指标,将阈值电流减少12.3%,斜率效率提升了15.6%;最终器件性能与刚开始相比阈值电流减少了44.6%,斜率效率提高了200%。上述结果表明了300nm GaN基半导体激光器器件结构优化在提高器件性能上的有效性。
[Abstract]:G GaN based material is the third generation semiconductor material after SiGAs. It has the characteristics of wide band gap and high electron mobility. The related alloy materials belong to direct band gap semiconductor, and the luminescence efficiency of the materials is high. Because of its wide band gap of 0.7 ~ 6.2eV, which includes a wide wavelength range from visible green light, blue light, ultraviolet light to ultraviolet light, it is suitable for fabrication of optical devices. Laser excitation can be achieved in a very small volume, with high luminous efficiency, fast response speed and long service life, etc., in information communication, laser display, underwater detection, Biological science and military fields such as lidar have a wide range of applications. The 300nm wavelength GaN semiconductor lasers studied in this paper belong to the deep ultraviolet range, can be used in biological detection, medical sterilization, missile early warning. In this paper, the research background, application and basic principle of semiconductor laser are briefly introduced, and the numerical calculation model is established. The structure of 300nm wavelength laser with simple double heterojunction is designed. The simulation results show that the threshold current of the device is 1.092 A, the threshold voltage is 6.052 V, and the slope efficiency is 0.042 W / A. The laser with simple structure has a wide range of side mode distribution, therefore, the structure A is improved to increase the ridge structure (structure BX), and the simulation results show that, The light field side-mode distribution of structure B is denser than that of structure A, but the threshold voltage is increased by 16. In order to improve the overall performance of the laser, a quantum well structure is introduced. The threshold current of structure C laser is reduced by 39.5%, the slope efficiency is increased by 116.7%, and the overall performance is greatly improved than before, and then the electronic barrier layer (structure D) is introduced to improve the performance of the laser, compared with the structure C. The laser structure of structure C improves the slope efficiency by 19.8. finally, the performance index of the laser is further improved by using the component gradient layer design (structure E). By reducing the threshold current by 12. 3, the slope efficiency has been increased by 15. 6. The final device performance has been reduced by 44. 6 compared with the beginning, and the slope efficiency has been improved by 200. The above results show that the structure optimization of 300nm GaN-based semiconductor laser device is improving the device structure. Effectiveness of part performance.
【学位授予单位】：郑州大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248.4

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