石墨烯纳米带的制备与性能研究

发布时间：2018-03-16 17:18

本文选题：石墨烯　切入点：反应离子刻蚀　出处：《西南科技大学》2017年硕士论文　论文类型：学位论文

【摘要】：自从2004年科学家用胶带法制出石墨烯后,石墨烯就成为近年来的研究热点。石墨烯是当今所知的所有材料中最薄的,并且石墨烯非常的牢固坚硬。作为一种单质,它在常温下电子传递速度比任何已知导体速度都快。石墨烯拥有非常特别的电学性能、光学性能以及力学性能等。而石墨烯纳米带是细条状的石墨烯,是一种石墨烯衍生的新的一维材料。石墨烯纳米带的带隙会随着带宽的减小而增加,它具有不同于石墨烯的电学性能。本文采用常压化学气相沉积法以乙醇为碳源在铜基底上生长石墨烯,并将其转移到SiO2/Si基底上。用场发射扫描电镜、透射电镜、拉曼光谱、光学显微镜对所制备的石墨烯进行表征和层数分析,对转移到不同基底上的不同层数的石墨烯进行了透光性分析。研究结果表明,常压条件下铜箔表面能够生长出质量较高、连续性较好的单层、双层至多层石墨烯。分析其生长过程及机理,发现常压下铜箔表面石墨烯生长迅速且接近逐层生长。常压下铜箔表面两层及两层以上石墨烯模式同样为范德华外延生长模式。由于常压下,分子的扩散平均自由程较小,在铜箔表面附近会有一定浓度未扩散出去的形成石墨烯所必需的碳原子或碳自由基。所以通入一定量的碳源后,在保温的过程中石墨烯仍然能够继续生长。在能够生长并转移出大面积、质量较高的石墨烯的基础上,我们以铜纳米线为掩模,采用反应离子刻蚀法将掩模周围的石墨烯刻蚀掉。去掉掩模后,最终会在基底上留下宽度和铜纳米线直径相近(200-300nm)且质量较好边缘光滑的石墨烯纳米带。经过聚焦离子束沉积Pt将石墨烯纳米带与电极相连后,对其进行性能进行测试分析。对石墨烯纳米带的形貌进行表征结果表明,铜纳米线能够很好的起到掩模的作用,使得最终形成的石墨烯纳米带结构完整且表面干净。我们还对石墨烯纳米带的气敏性能以及半导体热敏性能进行了测试分析。此外,我们还对其它石墨烯纳米材料(包括纳米多孔石墨烯,石墨烯纳米盘阵列)的制备工艺进行了研究探索。并成功制备出了纳米多孔石墨烯以及石墨烯纳米盘阵列。
[Abstract]:Since 2004, when scientists produced graphene with adhesive tape, graphene has become a hot topic in recent years. Graphene is the thinnest of all materials known today, and graphene is very firm and hard. It travels faster at room temperature than any known conductor. Graphene has very special electrical, optical and mechanical properties, and graphene nanobelts are thin graphene. It is a new one-dimensional material derived from graphene. The band gap of graphene nanobelts increases with the decrease of bandwidth. It has different electrical properties from graphene. In this paper, graphene was grown on copper substrate with ethanol as carbon source by atmospheric pressure chemical vapor deposition and transferred to SiO2/Si substrate. Field emission scanning electron microscope, transmission electron microscope, Raman spectroscopy were used. The graphene was characterized and analyzed by optical microscope, and the transmittance of graphene with different layers transferred to different substrates was analyzed. The results showed that the surface of copper foil could grow with high quality under atmospheric pressure. Single layer, double layer to multilayer graphene with good continuity. Growth process and mechanism are analyzed. It is found that graphene on copper foil surface grows rapidly under atmospheric pressure and is close to layer by layer growth. Two or more graphene layers on copper foil surface are also grown by van der Waals epitaxial growth mode under atmospheric pressure. There will be a certain concentration of carbon atoms or free radicals needed to form graphene near the surface of the copper foil. In the process of heat preservation, graphene can continue to grow. On the basis of the ability to grow and transfer graphene of large area and high quality, we use copper nanowires as the mask. The graphene around the mask is etched by reactive ion etching. In the end, graphene nanoribbons with similar width and copper nanowire diameter (200-300 nm) and smooth edges with good quality will be left on the substrate. After focused ion beam deposition, graphene nanowires will be connected to the electrode after focused ion beam deposition. The morphologies of graphene nanoribbons were characterized. The results show that copper nanowires can play a good role in mask. The resulting graphene nanobelts have a complete structure and clean surface. The gas sensing properties of graphene nanoribbons and the thermal sensitivity of semiconductors are also tested and analyzed. We also investigated the preparation process of other graphene nanomaterials, including nano-porous graphene and graphene nano-disk arrays, and successfully prepared nano-porous graphene and graphene nano-disk arrays.
【学位授予单位】：西南科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O613.71;TB383.1

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