纳米MOSFET毫米波等效电路建模

发布时间：2018-01-31 10:12

本文关键词： 45nm MOSFET 晶体管建模噪声参数　出处：《西南科技大学》2017年硕士论文　论文类型：学位论文

【摘要】：用于低功耗、混合信号及高频领域的CMOS技术的缩比进展,表明其最佳的高频性能已从低中反区转移至弱反区。小信号等效电路模型和参数提取技术是射频与毫米波电路设计的先决条件,是理解纳米级金属氧化物半导体场效应晶体管(MOSFET)物理机制和建立非线性等效电路模型的基础。虽然很多努力已投入表征和建模射频MOS晶体管,但是大多数文献过多集中关注于强反区的高性能和等效电路的建模,或者侧重于更成熟的工艺,而现有技术或建模部分不符合标准紧凑型MOSFET,这些模型可以在每个工作区中准确地描述晶体管特性,但不能保证模型在从一个工作区到另一个工作区的连续性。本文重点研究了纳米MOSFET在毫米波频段的小信号等效电路模型与参数提取技术。建模技术包括小信号等效电路模型,基于MOSFET的器件物理结构,建立了基于准静态近似的毫米波小信号等效电路模型;参数提取技术包括寄生参数和本征参数以及衬底效应,使用简化条件对等效电路进行简化,据此建立导纳参数的简化数学模型,并给出了所建立等效电路参数元件值的提取算法及流程。本文通过基于ADS电路仿真软件对所建立的45nm器件的等效电路进行1-50GHz的S参数仿真,并进一步开展了器件四噪声参数的仿真分析,仿真结果与测量数据的一致性对比,验证了本文所建模型及其参数提取算法的准确性和实用性。验证结果还表明所提出的建模方法从强反区到弱反区都具有较高的精度。
[Abstract]:Development of CMOS technology for low power consumption, mixed signals and high frequency fields. It is shown that the optimal high frequency performance has been transferred from low to middle inversion to weak inversion. The small signal equivalent circuit model and parameter extraction technology are prerequisites for the design of RF and millimeter wave circuits. It is understood that nanoscale metal oxide semiconductor field effect transistors (MOSFETs). Physical mechanisms and the basis for establishing nonlinear equivalent circuit models. Although much effort has been made to characterize and model RF MOS transistors. But most of the literatures focus too much on the modeling of high performance and equivalent circuits in the strong reaction zone, or on more mature processes, while the existing techniques or modeling parts do not conform to the standard compact MOSFET. These models can accurately describe transistor characteristics in each workspace. However, the continuity of the model from one working area to another can not be guaranteed. In this paper, the small signal equivalent circuit model and parameter extraction technology of nanometer MOSFET in millimeter wave band are studied. Including small signal equivalent circuit model. Based on the physical structure of MOSFET, the equivalent circuit model of millimeter-wave small signal based on quasi-static approximation is established. Parameter extraction techniques include parasitic parameters, intrinsic parameters and substrate effects. Simplified conditions are used to simplify equivalent circuits, and a simplified mathematical model of admittance parameters is established. The extraction algorithm and flow chart of the parameter component value of the established equivalent circuit are also given. In this paper, the equivalent circuit of the 45nm device is simulated by the ADS circuit simulation software with 1-50GHz S parameters. Really. Furthermore, the simulation analysis of the four-noise parameters of the device is carried out, and the consistency between the simulation results and the measured data is compared. The veracity and practicability of the proposed model and its parameter extraction algorithm are verified. The results also show that the proposed modeling method has high accuracy from strong to weak inverse regions.
【学位授予单位】：西南科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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