新型可集成横向功率器件以及分立纵向功率器件的研究

发布时间：2017-12-26 22:11

本文关键词：新型可集成横向功率器件以及分立纵向功率器件的研究　出处：《电子科技大学》2016年博士论文　论文类型：学位论文

【摘要】：电力电子技术是电能转换的关键技术。它将一种类型的电能转换成另一种类型的电能,从而实现各种场合的应用。电力电子系统最为关键的元器件就是功率半导体器件。随着电力电子技术的不断发展,集成化、智能化、小型化成为了主要的发展方向。智能功率集成电路应运而生,它将控制电路,驱动电路,保护电路以及功率半导体器件等集成到一个芯片里面,从而增加了系统的智能度和集成度。为了将功率器件集成到同一个芯片里,横向功率器件是最常见和最可行的选择。然而,由于在横向功率器件中,电流是横向流过器件表面附近,所以其电流密度较小,导通功耗较大,通常比较适用于较低电压和较小功率的应用场合。相比于横向功率器件,分立纵向功率器件电流密度大,导通压降低,更适合于高电压,高功率场合的应用。同时,为了系统的小型化等因素,通常也需要将两种或以上的分立器件集成或封装到一个芯片或模块中,例如逆导型绝缘栅双极性晶体管(Reverse Conducting-Insulated Gate Bipolar Transistor:RC-IGBT)。由此可见横向和纵向功率半导体器件都有着各自的发展和应用场合。鉴于以上分析,基于陈星弼教授提出的新型高低侧半导体器件以及复合缓冲层(后来称为超结:Super-Junction),本文主要对横向功率器件和纵向功率器件进行了研究和设计。本文的主要工作体现在第二章至第五章,其中第二至第三章为横向功率器件,第四至第五章为纵向功率器件。主要内容为:1.研究了横向功率半导体器件在高压集成电路中的应用,并提出了一种新型的p型横向双扩散金属-氧化物-半导体场效应晶体管(Lateral Double-diffused MetalOxide-Semiconductor field effect transistor:p-LDMOS)。该新型p-LDMOS被命名为“赝p-LDMOS”。该结构在导电时不仅利用空穴进行导电,同时,通过一个简单的自动控制电路还实现了电子层导电。由于电子迁移率约是空穴的3倍,从而,该pLDMOS的比导通电阻(specific on-resistance:R_(on,sp))被极大地降低。2.基于上述“赝p-LDMOS”的研究,本文提出了一种主要应用在半桥或全桥输出电路中的改进的反型层“赝p-LDMOS”。在改进的结构中,首次成功引入了电子的反型层进行导电,从而使得该“赝p-LDMOS”的比导通电阻R_(on,sp)进一步锐减。改进后的“赝p-LDMOS”的导电能力与现有的采用积累层导电的n-LDMOS电流能力相当。3.提出了一种体二极管具有低反向恢复电荷(Reverse Recovery Charge:Q_(rr))的超结U型栅-金属-氧化物-半导体场效应晶体管(Super-Junction-U-shaped gate MetalOxide-Semiconductor field effect transistor:SJ-UMOSFET或SJ-UMOS)。在功率MOSFET的大部分应用中,通常都会有一个反并联的二极管用于电感续流。由于MOSFET的结构特性,其本身就带有一个反并联的二极管,称为体二极管。传统的SJ-UMOS的体二极管由于存在漂移区的P柱向N柱注入空穴,使得体二极管的反向恢复电荷很大,这就极大地增加了系统功耗。本文提出一种新型的SJ-UMOS,该结构成功阻止了P柱向N柱的空穴注入,从而极大地降低了体二极管的反向恢复电荷。4.提出了一种新型的RC-IGBT。同功率MOSFET一样,IGBT在多数应用场合需要一个反并联的二极管用于电感续流。在同一芯片中集成了反并联体二极管的IGBT称为RC-IGBT。传统的RC-IGBT反向导电时存在严重的电流不均匀现象,从而存在体二极管反向恢复过程容易失效等缺点。本文提出的RC-IGBT不仅克服了反向导电时电流不均匀的缺点,同时还具有更好的导通压降(V_(on))与关断损耗(E_(off))的折中关系,而且体二极管的反向恢复电荷更低,反向恢复损耗更小。
[Abstract]:Power electronic technology is the key technology of power conversion. It converts one type of electric energy into another type of electric energy, so it can be applied in various situations. The most important component of the power electronic system is the power semiconductor device. With the continuous development of power electronics technology, integrated, intelligent, and small into the main direction of development. Intelligent power integrated circuit arises at the historic moment. It integrates control circuit, drive circuit, protection circuit and power semiconductor device into a chip, thus increasing the intelligence and integration of the system. In order to integrate power devices into the same chip, lateral power devices are the most common and most feasible choice. However, because transverse current flows across the device surface in transverse power devices, its current density is relatively small, and its power consumption is large. It is usually suitable for applications with low voltage and low power. Compared with the lateral power device, the vertical power device has large current density and low conduction pressure, which is more suitable for high voltage and high power applications. Meanwhile, for the sake of system miniaturization and other factors, it is usually necessary to integrate two or more discrete devices into a chip or module, such as Reverse Conducting-Insulated Gate Bipolar Transistor:RC-IGBT. It can be seen that both horizontal and longitudinal power semiconductor devices have their own development and application. In view of the above analysis, based on the new high and low side semiconductor devices and composite buffer layer proposed by Prof. Chen Xingbi (later known as super junction: Super-Junction), the transverse power devices and longitudinal power devices were studied and designed. The main work of this paper is from second chapters to fifth chapters, of which second to third chapters are horizontal power devices, and the fourth to fifth are longitudinal power devices. The main contents are as follows: 1. the application of lateral power semiconductor devices in high voltage integrated circuits, and puts forward a new type of P lateral double diffused metal oxide semiconductor field effect transistor (Lateral Double-diffused MetalOxide-Semiconductor field effect transistor:p-LDMOS). The new p-LDMOS is named "pseudo p-LDMOS". The structure is conductive not only by hole, but also by a simple automatic control circuit. Since the electron mobility is about 3 times that of a hole, the specific resistance (specific on-resistance:R_ (on, SP) of the pLDMOS) is greatly reduced. 2. based on the above "pseudopotential" research, a modified reverse layer "pseudo p-LDMOS", which is mainly used in the output circuit of half bridge or full bridge, is proposed in this paper. In the improved structure, the electronic inversion layer is successfully introduced for the first time, so that the "pseudo p-LDMOS" is further reduced than the conduction resistance R_ (on, SP). The improved electrical conductivity of the "pseudo p-LDMOS" is equivalent to the current capacity of the existing n-LDMOS electric current using the accumulating layer. 3. proposed a body diode reverse recovery charge is low (Reverse Recovery Charge:Q_ (RR)) of the super junction U type gate metal oxide semiconductor field effect transistor (Super-Junction-U-shaped gate MetalOxide-Semiconductor field effect transistor:SJ-UMOSFET or SJ-UMOS). In most applications of power MOSFET, an anti - parallel diode is usually used for inductor flow. Due to the structural characteristics of MOSFET, it itself has an anti - parallel diode, called a body diode. Due to the existence of P column in the drift region, the traditional SJ-UMOS diode is injected into the N column, which makes the reverse recovery charge of the TDC diode large, which greatly increases the power consumption of the system. In this paper, a new type of SJ-UMOS is proposed, which successfully prevents the hole injection from the P column to the N column, thus greatly reducing the reverse charge of the body diode. 4. a new type of RC-IGBT is proposed. Like power MOSFET, IGBT needs an anti - parallel diode for inductor flow in most applications. The IGBT, which integrates the antiparallel diode in the same chip, is called RC-IGBT. In the traditional RC-IGBT reverse conduction, there is a serious current inhomogeneous phenomenon, so the reverse recovery process of the body diode is easy to fail and so on. The RC-IGBT proposed in this paper not only overcomes the disadvantage of uneven current in reverse conduction, but also has a better trade-off relationship between conduction voltage drop (V_ (on)) and turn off loss (E_ (off)), and the reverse recovery charge of body diode is lower, and the reverse recovery loss is smaller.
【学位授予单位】：电子科技大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TN386;TN322.8

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