新型聚合物绝缘材料的设计、制备及其在有机薄膜晶体管上的应用研究

发布时间:2018-01-01 03:29

  本文关键词:新型聚合物绝缘材料的设计、制备及其在有机薄膜晶体管上的应用研究 出处:《吉林大学》2016年博士论文 论文类型:学位论文


  更多相关文章: 有机薄膜晶体管 绝缘层 聚合物材料 高介电常数 有机/无机杂化材料


【摘要】:有机集成电子工业为人类创造了一个智能的世界,其广泛应用于柔性显示、微电子产品、射频识别标签、生物传感器和智能卡等领域。作为其中重要的逻辑单元器件,有机薄膜晶体管因其具有质轻价廉,加工条件温和和可大面积柔性显示等优点而受到广泛关注。经过几十年的科研努力,有机薄膜晶体管的器件迁移率已经突破单晶硅水平。然而相比于无机晶体管器件,有机薄膜晶体管依然存在着阈值电压较高,有机半导体结晶较难控制等问题。为解决此类问题,开发新型绝缘层材料就成为了研究重点。作为有机薄膜晶体管中重要的组成部分,绝缘层可以有效地降低器件的阈值电压和操作电压,而其表面不同的物理化学性质也会对器件性能产生影响。因此,研制性能优越的绝缘层材料对有机薄膜晶体管的发展具有重要意义。根据以上思路,本论文分别设计、制备了三种可作为有机薄膜晶体管绝缘层的聚合物材料,并对其性能进行了研究。首先,我们设计合成了新型硅纳米粒子与有机聚合物材料掺杂共混的有机/无机杂化绝缘层材料。其中,硅纳米粒子表面修饰了能与聚合物发生反应并形成化学键连的有机官能团,使纳米粒子分散后固定于聚合物内部,解决了制备成膜后纳米粒子再团聚的问题。将纳米粒子与甲基丙烯酸酯类聚合物共混获得了可溶液加工的有机/无机杂化绝缘层材料。材料的介电常数可以通过加入的硅纳米粒子的量来调控。随后,我们设计并合成了多种含有联苯结构的甲基丙烯酸酯类衍生物单体。将其与甲基丙烯酸羟乙酯和甲基丙烯酸环氧丙酯进行共聚获得聚合物绝缘层材料。这种聚合物绝缘层材料可以通过溶液加工的方法制备成膜,并通过加热使其结构内的环氧结构开环形成交联网络,使材料热固化。最终获得的聚合物绝缘层薄膜拥有较好的抗溶剂性、良好的热力学性能和较高的介电常数。最后,为了能在单一变量条件下研究半导体层结晶形态和晶区尺寸大小与有机薄膜晶体管器件性质之间的规律,我们设计合成了一种具有聚合活性含蒽基结构的有机单体。将其与甲基丙烯酸羟乙酯和甲基丙烯酸环氧丙酯进行共聚,获得一系列具有不同蒽基含量的聚合物绝缘层材料。此聚合物绝缘层材料可以通过溶液加工的方法制备成膜,并通过加热使其结构内的环氧结构开环形成交联网络达到固化的目的。得到的一系列聚合物绝缘层薄膜的表面性质和表面形貌极其相似,屏蔽了绝缘层表面不同化学基团和形貌对载流子迁移影响变量。在绝缘层表面气相沉积的有机并五苯半导体分子结晶晶区尺寸大小随着聚合物结构中蒽基含量的增加而不断变小,达到了通过改变聚合物绝缘层结构从而调控半导体材料结晶晶区尺寸大小的目的。
[Abstract]:The organic integration of electronics industry to create a smart world for human beings, it is widely used in flexible display, micro electronics, RFID tags, biological sensors and smart cards and other fields. As one of the important logic devices, organic thin film transistor because of its light weight, mild processing conditions and large area flexible display has attracted widespread attention. After several decades of research efforts, the mobility of organic thin film transistor device has exceeded the level. However, compared to inorganic silicon transistors, organic thin-film transistors still exist threshold voltage is higher than the organic semiconductor crystal is difficult to control and other issues. In order to solve this problem, the development of new insulation materials has become the the emphasis of the research. As an important part of the organic thin film transistor, an insulating layer can effectively reduce the threshold voltage and operation The voltage, and the physical and chemical properties of the different surface will also affect the performance of the device. Therefore, development of the superior performance of the insulation is of great significance to the development of organic thin film transistor layer material. Based on the above ideas, this paper designed and prepared three kinds can be used as organic thin film transistor insulating layer of polymer material, and the its performance is studied. Firstly, we designed and synthesized a new type of silicon nanoparticles and organic polymer blend materials doped organic / inorganic hybrid insulation layer material. The surface modified silica nanoparticles can react with polymer and formation of chemical bond of organic functional groups, the dispersion of nano particles in the polymer after fixed internal solution preparation after the film and nanoparticles aggregation problem. The nanoparticles with methyl acrylate polymer blends obtained solution processable organic / inorganic hybrid The insulation layer materials. The dielectric constant of the material by the amount of silicon nanoparticles to control. Subsequently, methyl acrylate derivatives we designed and synthesized a variety of structures containing biphenyl monomers. The hydroxyethyl methacrylate and glycidyl methacrylate copolymer in polymer materials. The polymer insulation insulation layer layer of material can be prepared by solution processing of film, and by heating the epoxy structure within its structure open-loop form cross-linked network, so that the heat cured material. The final polymer insulating film has good solvent resistance, dielectric constant and thermodynamic performance satisfactory. Finally, in order to the single variable is studied under the condition of the semiconductor layer between the crystal form and area size and properties of organic thin film transistor device pattern, we designed and synthesized a The organic monomer containing anthracene radical polymerization. The structure and 2-hydroxyethyl methacrylate and glycidyl methacrylate copolymer, obtained a series of different content of anthracene based polymer insulation layer material. The polymer insulation materials can be prepared by solution processing of film, and by heating the epoxy structure within the structure of open loop network to achieve the purpose of curing cross-linking. The surface properties and surface morphology of a series of polymer insulating layer thin films are very similar, the shielding surface of the insulation layer of different chemical groups and morphology of the carrier mobility variables. In the surface of an insulating layer of vapor deposition of organic semiconductor molecules and five benzene crystal size with the increase of the size of anthracene content in the polymer structure and become smaller, the layer structure and regulation of semiconductor crystal by changing the polymer insulation at The purpose of the size of the area.

【学位授予单位】:吉林大学
【学位级别】:博士
【学位授予年份】:2016
【分类号】:TN321.5;TQ317

【参考文献】

相关硕士学位论文 前1条

1 宋林;酞菁铜有机薄膜晶体管器件的研究[D];北京交通大学;2007年



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