p型半导体氧化物微纳材料及光电器件研究

发布时间：2018-07-22 10:10

【摘要】：半导体氧化物在太阳能电池、发光二极管、光探测器、透明导电薄膜、光催化等方面都具有重要的应用。为了获得高性能的半导体氧化物光电器件,高质量p型导电层是必须具备的,而高性能的p型半导体一直较难制备,存在掺杂固溶度较低,稳定性较差,本征p型材料载流子传输能力不高等缺点。因此,本论文针对这个问题,以p型半导体氧化物微晶制备为突破口,进而制作光电器件验证其电学和光学特性。在本论文工作中制备出性能优异Sb掺杂p型ZnO微米线,以及生长高质量的本征p型的CuGaO_2六角纳米片,并以此为基础构造同质/异质p-n结光电器件。本论文取得的创新性结果如下:1.采用双温区同步掺杂生长的办法,制备出Sb掺杂p型ZnO微米线;掺杂后的ZnO微米线在低温发光光谱中观测到受主发光峰;通过对单根微米线进行电学测试(I-V及场效应FET测试),发现其导电类型呈现p型。2.用掺杂后的p型ZnO微米线和未掺杂的n型ZnO微米线构造交叉结构的同质p-n结,器件具有良好的整流特性和紫外探测性质,器件对紫外光具有较高的响应度及高选择特性,探测器响应波长范围在380~400 nm,-5V电压下的响应度可达到200 m A W-1,响应半峰宽仅为6 nm,外量子效率为64.5%。3.采用高温高压水热法,生长出六角形的CuGaO_2纳米片,直径约为10μm;低温发光光谱中出现了自由激子和束缚激子发光峰;其室温发光中心位于450nm,对应于CuGaO_2中的Cu空位缺陷的发光,而Cu空位是导致CuGaO_2呈p型导电的缺陷;通过构造Au/p-CuGaO_2/n-Zn O/ITO异质结,发现器件具有良好的整流特性,证明了CuGaO_2纳米片的p型导电性。4.通过溶液烧结法制备CuGaO_2纳米片与ZnO纳米颗粒复合材料,室温下复合材料在长波一侧出现了新的发光峰并且占主导,低温下新的发光峰发生劈裂这是由于复合材料内部p-n结的存在,使能带弯曲所致;通过光催化测试发现,复合材料相比单一两种材料的光催化性能有较大提高,并且观测到可见光的光催化能力,这是由于复合材料p-n结的存在增强了对可见光的吸收。
[Abstract]:Semiconductor oxides have important applications in solar cells, light-emitting diodes, photodetectors, transparent conductive films, photocatalysis and so on. In order to obtain high performance semiconductor oxide optoelectronic devices, high quality p-type conductive layer must be possessed, while high performance p-type semiconductor is always difficult to prepare, and the doped solid solubility is low and the stability is poor. The intrinsic p-type material carrier transport capacity is not high and so on. Therefore, in order to solve this problem, the preparation of p-type semiconductor oxide microcrystals is taken as the breakthrough point in this paper, and the electrical and optical properties of the devices are verified by the fabrication of optoelectronic devices. In this thesis, excellent SB doped p-type ZnO micron wires and high quality CuGaO _ 2 hexagonal nanostructures were fabricated. Based on these, homogenous / heterostructure p-n junction optoelectronic devices were fabricated. The innovative results of this paper are as follows: 1. The SB doped p-type ZnO micron lines were prepared by the method of synchronously doping in the double temperature region, and the acceptor luminescence peaks were observed in the low temperature luminescence spectra of doped ZnO micron lines. Through the electrical test (I-V and FET) of single micron wire, it is found that the conduction type of the wire is p. 2. Homogeneous p-n junctions with cross structure are constructed by doping p-type ZnO micron lines and undoped n-type ZnO micron wires. The devices have good rectifying characteristics and UV detection properties, and the devices have high responsivity and high selectivity to ultraviolet light. The responsivity of the detector can reach 200 Ma W-1 at a voltage of 380 nm ~ 400 nm ~ (-1), the half-width of the response peak is only 6 nm, and the external quantum efficiency is 64.5 nm 路3. A hexagonal CuGaO _ 2 nanocrystalline with a diameter of about 10 渭 m was grown by high temperature and high pressure hydrothermal method. The photoluminescence peaks of free excitons and bound excitons appeared in the low temperature luminescence spectra, and the luminescence center at room temperature was 450 nm, corresponding to the luminescence of Cu vacancy defects in CuGaO _ 2. By constructing Au/ p-CuGaO2 / n-ZnO / ITO heterostructure, it is found that the device has good rectifying property, which proves the p-type conductivity of CuGaO _ 2 nanocrystalline. CuGaO-2 nanocomposites with ZnO nanoparticles were prepared by solution sintering. At room temperature, new luminescence peaks appeared on the long wave side of the composites and dominated. The cleavage of the new luminescence peak at low temperature is due to the existence of p-n junctions in the composites, which results in the band bending. The photocatalytic properties of the composites are greatly improved compared with those of the single two materials. The photocatalytic ability of visible light was observed because the p-n junction enhanced the absorption of visible light.
【学位授予单位】：中国科学院研究生院(长春光学精密机械与物理研究所)
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TB383.1;TN23

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