基于MEMS的电磁激励谐振传感器研究
发布时间：2018-12-15 18:47
【摘要】：本文基于压阻效应和电磁感应构建电磁激励谐振传感器,该传感器包括激振结构和拾振结构,通过对电磁激励谐振传感器进行理论分析,该结构中激励线圈产生的磁场与外加磁场间存在相互作用磁力,拾振结构输出电压信号发生改变,理论分析表明该结构可完成电磁激励谐振传感器功能。在此基础上,利用Ansys软件分别对激振结构和拾振结构进行仿真模型构建和仿真分析,优化电磁激励谐振传感器的设计,通过采用Matlab软件对硅膜应力分布进行计算分析,优化拾振结构中硅膜上纳米硅薄膜晶体管设计位置。根据理论和仿真分析,电磁激励谐振传感器芯片尺寸为5000μm×5000μm,硅膜厚度为45μm,硅膜尺寸为3000μm×3000μm,激振结构中电感线圈35匝铝线圈,线圈宽度为7μm,间距为11μm,厚度为1μm;拾振结构中纳米硅薄膜晶体管沟道长度和宽度分别为320μm和80μm。本文通过采用MEMS技术和CMOS工艺在n型100晶向高阻单晶硅片制作电磁激励谐振传感器,在硅片的上表面方形硅膜的中部采用掩埋浓硼内引线方法制作激振结构,即能产生交变磁场的金属电感线圈;采用CMOS技术在方形硅膜上制作四个纳米硅薄膜晶体管沟道电阻作为压敏电阻,构成惠斯通电桥作为拾振结构。实验结果给出,电磁激励谐振传感器的激振结构能够感应外界磁场变化并产生感生电压,当对激振结构施加交变激励电压时,激振结构能够产生交变磁场,当激振结构通以恒定电压,在交变磁场作用下,可使硅膜产生振动,振动频率与交变磁场频率一致,方形和圆形电感线圈在工作频率为200k Hz时电感值分别为27.43n H和31.07n H。电磁激励谐振传感器的拾振结构在硅膜振动时,能够对硅膜振动做出响应,拾振结构在工作电压为5.0V时,响应灵敏度为0.146m V/k Pa。实验结果表明,本文设计的电磁激励谐振传感器能够实现电磁激励使硅膜产生振动,通过拾振结构可以完成对硅膜振动的检测。
[Abstract]:In this paper, based on piezoresistive effect and electromagnetic induction, the electromagnetic excitation resonant sensor is constructed. The sensor includes the exciting structure and the picking up structure. Through the theoretical analysis of the electromagnetic excitation resonance sensor, There is interaction between the magnetic field generated by the exciting coil and the external magnetic field in the structure, and the output voltage signal of the picking up structure changes. The theoretical analysis shows that the structure can accomplish the function of electromagnetic excitation resonance sensor. On this basis, the simulation model and simulation analysis of the excited structure and the pick up structure are carried out by using Ansys software, and the design of electromagnetic excitation resonance sensor is optimized. The stress distribution of silicon film is calculated and analyzed by using Matlab software. The design position of nanocrystalline silicon thin film transistor on silicon film is optimized. According to the theory and simulation analysis, the size of electromagnetic exciting resonant sensor chip is 5000 渭 m 脳 5000 渭 m, the thickness of silicon film is 45 渭 m, the size of silicon film is 3000 渭 m 脳 3000 渭 m, the inductance coil is 35 turns aluminum coil, the width of coil is 7 渭 m, the spacing is 11 渭 m, and the thickness is 1 渭 m. The channel length and width of nanocrystalline silicon thin film transistor are 320 渭 m and 80 渭 m respectively. In this paper, the electromagnetic excitation resonant sensor is fabricated by using MEMS technology and CMOS process on n-type 100 crystal high resistance single crystal silicon wafer. In the middle of the square silicon film on the top surface of the silicon wafer, the excited structure is fabricated by buried concentrated boron inner lead method. The metal inductance coil which can produce alternating magnetic field; The channel resistance of four nanocrystalline silicon thin film transistors was fabricated on the square silicon film by CMOS technology as the varistor and the Wheatstone bridge was constructed as the pick up structure. The experimental results show that the exciting structure of electromagnetic excitation resonant sensor can induce the change of external magnetic field and generate induced voltage. When the exciting structure is subjected to alternating excitation voltage, the excited structure can produce alternating magnetic field. When the excited structure passes the constant voltage, the silicon film can vibrate under the action of the alternating magnetic field, and the vibration frequency is the same as the frequency of the alternating magnetic field. The inductance values of square and circular inductance coils are 27.43nH and 31.07nH, respectively, when the operating frequency is 200k Hz. The structure of electromagnetic excitation resonance sensor can respond to the vibration of silicon film when the film is vibrating. The sensitivity of the structure is 0.146 MV / k Pa. when the working voltage is 5.0 V. The experimental results show that the electromagnetic excitation resonant sensor designed in this paper can realize the vibration of silicon film induced by electromagnetic excitation and detect the vibration of silicon film by picking up vibration structure.
【学位授予单位】：黑龙江大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TP212
，
本文编号：2381117
[Abstract]:In this paper, based on piezoresistive effect and electromagnetic induction, the electromagnetic excitation resonant sensor is constructed. The sensor includes the exciting structure and the picking up structure. Through the theoretical analysis of the electromagnetic excitation resonance sensor, There is interaction between the magnetic field generated by the exciting coil and the external magnetic field in the structure, and the output voltage signal of the picking up structure changes. The theoretical analysis shows that the structure can accomplish the function of electromagnetic excitation resonance sensor. On this basis, the simulation model and simulation analysis of the excited structure and the pick up structure are carried out by using Ansys software, and the design of electromagnetic excitation resonance sensor is optimized. The stress distribution of silicon film is calculated and analyzed by using Matlab software. The design position of nanocrystalline silicon thin film transistor on silicon film is optimized. According to the theory and simulation analysis, the size of electromagnetic exciting resonant sensor chip is 5000 渭 m 脳 5000 渭 m, the thickness of silicon film is 45 渭 m, the size of silicon film is 3000 渭 m 脳 3000 渭 m, the inductance coil is 35 turns aluminum coil, the width of coil is 7 渭 m, the spacing is 11 渭 m, and the thickness is 1 渭 m. The channel length and width of nanocrystalline silicon thin film transistor are 320 渭 m and 80 渭 m respectively. In this paper, the electromagnetic excitation resonant sensor is fabricated by using MEMS technology and CMOS process on n-type 100 crystal high resistance single crystal silicon wafer. In the middle of the square silicon film on the top surface of the silicon wafer, the excited structure is fabricated by buried concentrated boron inner lead method. The metal inductance coil which can produce alternating magnetic field; The channel resistance of four nanocrystalline silicon thin film transistors was fabricated on the square silicon film by CMOS technology as the varistor and the Wheatstone bridge was constructed as the pick up structure. The experimental results show that the exciting structure of electromagnetic excitation resonant sensor can induce the change of external magnetic field and generate induced voltage. When the exciting structure is subjected to alternating excitation voltage, the excited structure can produce alternating magnetic field. When the excited structure passes the constant voltage, the silicon film can vibrate under the action of the alternating magnetic field, and the vibration frequency is the same as the frequency of the alternating magnetic field. The inductance values of square and circular inductance coils are 27.43nH and 31.07nH, respectively, when the operating frequency is 200k Hz. The structure of electromagnetic excitation resonance sensor can respond to the vibration of silicon film when the film is vibrating. The sensitivity of the structure is 0.146 MV / k Pa. when the working voltage is 5.0 V. The experimental results show that the electromagnetic excitation resonant sensor designed in this paper can realize the vibration of silicon film induced by electromagnetic excitation and detect the vibration of silicon film by picking up vibration structure.
【学位授予单位】：黑龙江大学
【学位级别】：博士
【学位授予年份】：2016
【分类号】：TP212
，
本文编号：2381117
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