半导体激光照射对牙齿根尖封闭效果的研究

发布时间：2018-04-01 14:02

本文选题：半导体激光　切入点：熔融　出处：《实用口腔医学杂志》2017年03期

【摘要】：目的:探讨常规根管预备后使用半导体激光进行根管内照射对根尖封闭性能的影响。方法:选择新鲜拔除的单根管牙60颗,分6组(n=10),去除牙冠,常规根管预备。A、B组,半导体激光1 W照射20 s;C、D组,超声荡洗1 min;E、F组,不做任何处理,作为对照组。常规热牙胶垂直加压法充填6组牙根。微渗漏实验对根充后的A、C、E组牙的根尖封闭性能进行评估,扫描电镜观察B、D、F组牙根剖面。结果:A、C、E组根管微渗漏(mm)分别为1.70±0.82、2.02±0.40和4.56±2.76(A vs E,P0.01;C vs E,P0.05,A vs C,P0.05),扫描电镜观察到激光组大部分牙本质小管发生熔融、缩小或封闭,超声荡洗组大部分牙本质小管内有糊剂或牙胶进入。结论:半导体激光进行根管内照射可以显著提高根充后根尖的封闭性能。
[Abstract]:Objective: to investigate the effect of semiconductor laser irradiation on the sealing of root tip after routine root canal preparation. Methods: 60 teeth with fresh root canal were selected and divided into 6 groups (n = 10) to remove crown, and group A (n = 10) for routine root canal preparation. Group D was irradiated with semiconductor laser for 1 W, Group F was washed by ultrasound for 1 min, without any treatment. The root of 6 groups were filled with normal hot gum vertical pressure. The apical sealing performance of Agna CnE group after root filling was evaluated by microleakage test. Results the root canal microleakage was 1.70 卤0.82U 2.02 卤0.40 and 4.56 卤2.76A vs EPO P0.01C vs EP 0.05A vs CP 0.05A in the group of W An Con E, respectively. Scanning electron microscope showed that most of the dentinal tubules in the laser group were fused, narrowed or closed, and the results showed that most of the dentinal tubules in the laser group were fused, narrowed down or closed off by scanning electron microscope, and the results showed that most of the dentinal tubules in the laser group were fused, reduced or closed off by scanning electron microscope. Conclusion: semiconductor laser irradiation in root canal can significantly improve the sealing performance of root tip after root filling.
【作者单位】：青岛大学附属医院口腔科;青岛大学附属医院中心实验室;
【分类号】：R781.05

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