马达驱动高压功率芯片设计及IGBT的开启机理研究

发布时间：2018-02-26 08:54

本文关键词： 功率半导体器件 IGBT 功率集成电路 LDMOS 三相马达驱动芯片　出处：《浙江大学》2014年硕士论文　论文类型：学位论文

【摘要】：随着世界范围内能源危机的到来,各国政府都在为经济可持续发展的目的积极推广节能降耗技术。高效节能已经成为未来电子产品发展的一个重要方向。目前,电源能耗标准已经在全球逐步实施,世界各国已对家电与消费电子产品的待机功耗与效率开始实施越来越严格的省电要求。功率半导体器件与功率集成电路在电力、能源、航天及消费类电子领域扮演着不可或缺的角色,因此,功率半导体器件与功率集成电路的研究与开发,具有举足轻重的地位。本论文的主要工作及创新点： 1、对功率分立器件IGBT进行了深入研究。重点研究了IGBT的开关特性和安全工作区。通过TCAD工具仿真和流片测试,分析了IGBT开启过程中遇到的共性问题——在IGBT的开启过程中,集电极电压Vce在短时间内出现不降反升的现象。通过调研文献、仿真和测试的对比,作者提出了一种IGBT的开启机制,完美地解释了上述出现的异常现象,并对相关参数进行了仿真,从而提出了降低IGBT开关功耗的新思路。 2、设计了一款基于BCD工艺的500V三相马达驱动芯片。针对变频节能空调的应用,开发出具有自主知识产权的500V三相马达驱动智能功率芯片产品。该芯片采用PN结对通隔离,将电源电路、低压控制逻辑电路、20KHz振荡器、PWM控制电路、过热、过流、欠压保护电路,高低端驱动电路、自举二极管以及由六个LDMOS组成的三相半桥驱动电路集成在同一芯片上。因此该芯片高度集成化、小型化以及智能化。相比于Toshiba公司用较为昂贵的SOI工艺设计,本文采用相对便宜并且成熟的BCD外延工艺进行设计,虽然难度较大,但是成本能降低不少,因此可以取代进口,实现国产化。另外,创造性地设计了NLDMOS上管结构,既减少了掩膜板的数量,又节省了芯片面积。
[Abstract]:With the arrival of the worldwide energy crisis, governments of all countries are actively promoting energy-saving technologies for the purpose of sustainable economic development. Efficient energy saving has become an important direction for the development of electronic products in the future. At present, Power consumption standards have been implemented step by step in the world. Countries in the world have begun to implement more and more stringent power saving requirements for the standby power consumption and efficiency of household appliances and consumer electronic products. Aerospace and consumer electronics play an indispensable role, so the research and development of power semiconductor devices and power integrated circuits play an important role. The main work and innovation of this thesis are as follows:. 1. The power discrete device IGBT is studied in depth. The switching characteristics and safe working area of IGBT are studied emphatically. The common problems encountered in the process of IGBT opening are analyzed through the simulation of TCAD tools and the test of streamer, which is the common problem in the process of IGBT opening. The collector voltage Vce appears the phenomenon of not falling but rising in a short period of time. Based on the investigation and comparison of literature, simulation and test, the author puts forward a mechanism of opening IGBT, which perfectly explains the abnormal phenomenon mentioned above. The related parameters are simulated, and a new idea to reduce the power consumption of IGBT switch is proposed. 2. A 500V three-phase motor drive chip based on BCD process is designed. In view of the application of frequency conversion and energy-saving air conditioning, a 500V three-phase motor driving intelligent power chip with independent intellectual property is developed. The power supply circuit, low voltage control logic circuit, 20kHz oscillator PWM control circuit, overheating, overcurrent, undervoltage protection circuit, high and low end drive circuit, The bootstrap diode and the three-phase half-bridge drive circuit composed of six LDMOS are integrated on the same chip. Therefore, the chip is highly integrated, miniaturized and intelligent. In this paper, the relatively cheap and mature BCD epitaxy process is adopted. Although it is difficult, but the cost can be reduced a lot, so it can replace the import and realize the localization. In addition, the NLDMOS tube structure is designed creatively. Not only reduce the number of mask board, but also save the chip area.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN322.8;TN402

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