集成电路物理自损防护技术研究及实现

发布时间：2018-03-05 14:37

  本文选题：物理攻击　切入点：物理自损　出处：《合肥工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：集成电路芯片越来越多地成为重要信息的存储载体,这些信息需要得到保护;同时,芯片内部的电路结构本身作为重要的知识产权,也需要得到有效保护。技术的进步使得针对芯片的各种物理攻击成为可能,在此背景下硬件安全问题日益重要,关于硬件防护技术的研究也成为当前的研究热点。传统的被动式防护技术很难彻底的抵御攻击者的攻击,容易造成关键信息泄露;集成电路物理性自损防护技术是一种主动防护技术,通过自损终止攻击行为,从而达到保护集成电路信息安全的目的,是目前最彻底、最有效的保护方法。针对改变芯片的工作温度可以攻击芯片,本论文研究一种抗温度错误注入攻击的物理自损防护技术。论文首先介绍了现有的集成电路防护技术,然后分析了集成电路物理攻击的原理,最后基于TSMC 0.18μm CMOS工艺设计了物理自损防护电路,电路具有抗温度错误注入攻击的功能,能够实现主动防护。关键电路包括带隙基准电路、比较器电路、电荷泵电路。其中,带隙基准电路采用了高阶温度补偿技术、调节型共源共栅结构,有效地降低了温度系数和提高了电源电压抑制比;比较器电路采用预放大可再生结构,有效提高了比较速度,减小了功耗;电荷泵电路采用交叉耦合级联结构,PMOS管的衬底与源极相连接,有效减少了阈值电压变化,提高了电荷传输效率。本文设计的抗温度错误注入攻击能够防御-40℃以下和120℃以上的攻击。对设计的抗温度错误注入攻击物理防护中的电路进行仿真,带隙基准电压源的温度系数为13.94ppm/℃,电源电压抑制比为59.17dB;比较器的大信号传输延迟为0.307ns;小信号传输延迟为0.403ns。电荷泵的输出电压为13.5V,纹波范围为±1.18%。最后对所设计的物理自损防护电路进行了整体仿真,仿真结果表明,在T=-41℃时,建立时间为775ns;在T=121℃时,建立时间为630ns,达到了在低温和高温损坏关键电路的目的。
[Abstract]:Integrated circuit chips are increasingly becoming storage carriers of important information that needs to be protected; at the same time, the circuit structure within the chip itself serves as an important intellectual property right. There is also a need for effective protection. Advances in technology have made possible various physical attacks on chips, and hardware security issues are becoming increasingly important in this context. The traditional passive protection technology is difficult to resist the attack of the attacker, and it is easy to cause the key information leak. Physical self-damage protection technology of integrated circuit is a kind of active protection technology. It is the most thorough at present to protect the information security of integrated circuit by stopping the attack behavior by self-damage. The most effective protection method. In order to change the working temperature of the chip can attack the chip, this paper studies a kind of physical self-damage protection technology against temperature error injection attack. Firstly, this paper introduces the existing integrated circuit protection technology. Then the principle of integrated circuit physical attack is analyzed. At last, based on TSMC 0.18 渭 m CMOS process, the physical self-loss protection circuit is designed. The circuit has the function of resisting temperature error injection attack, and can realize active protection. The key circuit includes the bandgap reference circuit. The comparator circuit and charge pump circuit, in which the bandgap reference circuit adopts high-order temperature compensation technology, regulates the common source common-gate structure, effectively reduces the temperature coefficient and improves the power supply voltage rejection ratio. The comparator circuit adopts preamplifying and renewable structure, which effectively improves the comparison speed and reduces the power consumption, and the charge pump circuit uses the cross-coupled cascade structure to connect the substrate of PMOS transistor to the source pole, which effectively reduces the threshold voltage variation. The designed anti-temperature error injection attack can defend against the attack below -40 鈩，

本文编号：1570654