基于离子注入工艺的新型SiC IGBT的设计与仿真

发布时间：2018-06-05 23:25

本文选题：SiC + IGBT　；参考：《西安电子科技大学》2014年硕士论文

【摘要】：由于碳化硅(SiC)材料具有大的禁带宽度、高热导率、高临界击穿场强、高饱和漂移速度等优点,使得碳化硅绝缘栅双极晶体管(SiC IGBT)拥有许多Si基IGBT无法比拟的优良特性,更适合应用于高频、高压、辐照环境中,在智能电网、舰载激光武器、电动车辆、航天等领域发挥重大作用。对SiC IGBT的研究已成为当前微电子技术领域的热点和前沿。目前,SiC IGBT制备技术为欧美发达国家所垄断,国内相关的研究起步晚,研发自主知识产权的SiC IGBT器件意义重大。在此背景下,本文结合SiC IGBT的工作原理与解析模型,重点开展了SiC IGBT的设计与仿真研究工作,并提出了相关新型制备工艺方法,为下一步实验制备SiC IGBT做好理论准备工作。针对上述SiC IGBT的研究工作,本文第一归纳了SiC材料优良的物理电学特性,以及SiC IGBT器件所具有的优势,接着对IGBT的种类与其发展历程做出了介绍,然后着重介绍了本文所要设计仿真的p沟道SiC IGBT在世界上的发展研究近况,并做出了相关总结。第二,分析了SiC IGBT的主要结构特点与工作机理,对其电导调制效应做了重要阐述。接着,对SiC IGBT的开启电压、导通特性、开关特性进行了理论分析推导,并建立了导通电流、击穿电压等主要电学参数的解析模型。然后,研究了SiC IGBT中的闩锁效应产生机理,并提出了一些抑制闩锁效应的常用方法。第三,针对SiC IGBT的制备提出了一种无需外延工艺,利用SiC衬底充当耐压层,通过离子注入方法制备SiC p-IGBT的新型方法,并给出了具体实施方法。第四,选取4H-SiC做为本文制备p-IGBT的材料,依据SiC IGBT的工作特性和解析模型,对器件各个区域的掺杂浓度,尺寸宽度、厚度分别做出了分析与选择,建立起了供计算机仿真使用的SiC IGBT结构参数模型。本文最后,研究了Sentaurus TCAD工具中的SiC材料的物理模型,然后重点对SiC IGBT的开启、导通特性、击穿特性、开关特性以及温度特性进行了仿真研究,深入分析了载流子、电场等在器件中的分布情况及影响。根据仿真结果,本文所设计的SiC IGBT的正向击穿电压为12000V,阻性关断时间为120ns,-25V栅压下的比导通电阻仅为6.2mΩ·cm2,均已达到预期理论目标。
[Abstract]:Because the silicon carbide (SiC) material has the advantages of large band width, high thermal conductivity, high critical breakdown field strength and high saturation drift speed, the silicon carbide insulated gate bipolar transistor (SiC IGBT) has many excellent properties compared with Si based IGBT. It is more suitable for application in high frequency, high pressure, irradiation environment, in smart grid, shipborne laser weapon, The research on SiC IGBT has played an important role in the field of aerospace and other fields. It has become a hot spot and frontier in the field of microelectronic technology. At present, SiC IGBT preparation technology is monopolized by developed countries in Europe and America. Domestic related research is late, and the research and development of SiC IGBT devices with independent intellectual property rights is of great significance. In this context, this paper combines with SiC IG. The working principle and analytical model of BT, focus on the design and Simulation of SiC IGBT, and put forward a new process method to prepare SiC IGBT for the next experiment. Aiming at the research work of the SiC IGBT, this paper first summarizes the excellent physical and electrical characteristics of SiC materials, and the SiC IGBT apparatus. The advantages of IGBT are introduced, then the development of P channel SiC IGBT, which is designed and simulated in this paper, is introduced, and the related summary is made. Second, the main structure and working mechanism of SiC IGBT are analyzed, and the conductance modulation effect is important. Then, the opening voltage, the conduction characteristics and the switching characteristics of SiC IGBT are theoretically derived, and the analytical models of the main electrical parameters such as the conduction current and the breakdown voltage are established. Then, the mechanism of the latch effect in the SiC IGBT is studied, and some common methods to suppress the latch effect are proposed. Third, for SiC IGBT A new method of preparing SiC p-IGBT by ion implantation by SiC substrate without the need of epitaxial process is presented. The specific implementation method is given. Fourth, 4H-SiC is selected as the material for preparing p-IGBT. Based on the working characteristics and analytical model of SiC IGBT, the doping concentration and size of each region of the device are measured. The width and thickness are analyzed and selected respectively, and the SiC IGBT structure parameter model for computer simulation is set up. Finally, the physical model of the SiC material in the Sentaurus TCAD tool is studied, and then the simulation research on the opening, the conduction characteristic, the breakdown characteristic, the switching characteristic and the temperature characteristic of the SiC IGBT is emphasized. The distribution and influence of the carrier and electric field in the device are analyzed. According to the simulation results, the forward breakdown voltage of SiC IGBT is 12000V, the blocking time is 120ns, and the specific resistance of the -25V gate is only 6.2m Omega cm2, all of which have reached the expected theoretical goal.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN322.8;TN304.24

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