基于真空电阻焊的MEMS器件级封装研究

发布时间:2018-09-14 12:32
【摘要】:各种射频、惯性、机械谐振器等MEMS器件通常在高真空环境下才能保证优良的性能和较高的品质因数,因而需要进行真空封装。本文提出采用真空电阻熔焊来实现MEMS器件真空封装的新方法。通过理论、数值模拟、实验等方法系统地研究了MEMS器件真空电阻封装过程中的关键技术问题,制定MEMS器件的真空电阻熔焊封装的工艺标准。其主要研究内容和创新如下: 通过大量封装试验和对真空封装技术分析的基础上,摸索出真空电阻熔焊影响真空的关键因素。根据真空环境进行焊接的新特点,研制了具有自主知识产权的真空电阻熔焊设备;该设备将手套箱体、真空烘箱、抽真空系统、焊接机构融为一体,实现了电阻熔焊技术与真空封装工艺的有机结合,保证了真空封装的质量。 真空封装过程中需监测MEMS器件的真空度。本文采用石英晶振的谐振电阻随环境真空度变化而变化的原理实现了MEMS器件小体积内的真空度测量,并深入研究了各种影响真空度测量的因素。 对真空电阻凸焊过程进行热-电-结构三场耦合有限元模拟。对电阻凸焊预压阶段的接触过程进行数值模拟,研究了其中凸焊筋位移场、应力场、温度场、电流场的分布规律。 为实现真空度在10Pa以下的MEMS器件真空封装,创造性地提出了带缓冲腔的真空壳体来保证真空腔体泄漏率,设计出了MEMS器件真空封装专用外壳。为提高真空封装的成品率,分析了金属镀层对封装质量的影响,进行了真空封装外壳焊接后的焊接强度、真空度保持实验,保证了真空封装工艺的可靠性。提出了一套基于真空电阻熔焊的MEMS器件真空封装工艺。 应用真空物理的相关理论,,建立了MEMS器件真空电阻熔焊封装模型,分析引起封装腔体的真空度降低的主要原因。通过真空封装专用外壳封装泄漏率的理论计算,对真空封装MEMS器件进行真空寿命计算。试验结果显示自行设计的真空封装壳体可以满足长时间真空度保持的要求,证明了真空电阻熔封装工艺的可靠性。
[Abstract]:All kinds of MEMS devices such as RF, inertia, mechanical resonator and so on can guarantee excellent performance and high quality factor in high vacuum environment, so vacuum packaging is needed. A new method of vacuum packaging for MEMS devices by vacuum resistance welding is proposed in this paper. By means of theory, numerical simulation and experiment, the key technical problems in vacuum resistance packaging of MEMS devices are systematically studied, and the process standard of vacuum resistance welding packaging for MEMS devices is established. The main research contents and innovations are as follows: based on a large number of packaging tests and analysis of vacuum packaging technology, the key factors of vacuum resistance welding affecting vacuum are found out. According to the new characteristics of welding in vacuum environment, a vacuum resistance welding equipment with independent intellectual property rights has been developed, which integrates the glove box, vacuum oven, vacuum pumping system and welding mechanism. The integration of resistance welding technology and vacuum packaging technology is realized, and the quality of vacuum package is guaranteed. Vacuum degree of MEMS devices should be monitored during vacuum packaging. In this paper, the principle that the resonant resistance of quartz crystal oscillator changes with the variation of ambient vacuum degree is used to realize the measurement of vacuum degree in small volume of MEMS device, and various factors affecting the measurement of vacuum degree are studied in depth. The thermoelectric-structure three-field coupling finite element simulation was carried out for the vacuum resistance convex welding process. The contact process of resistance convex welding in preloading stage is numerically simulated. The distribution of displacement field, stress field, temperature field and current field of convex welding bar are studied. In order to realize vacuum packaging of MEMS devices with vacuum degree below 10Pa, the vacuum shell with buffer cavity is creatively proposed to guarantee the leakage rate of vacuum cavity, and a special shell for vacuum packaging of MEMS devices is designed. In order to improve the finished product rate of vacuum packaging, the influence of metal coating on the quality of vacuum packaging was analyzed. The welding strength and vacuum retention experiment of vacuum packaging shell after welding were carried out to ensure the reliability of vacuum packaging process. A vacuum packaging process for MEMS devices based on vacuum resistance welding is proposed. Based on the theory of vacuum physics, the vacuum resistance welding packaging model of MEMS devices is established, and the main reasons for the vacuum reduction of the cavity are analyzed. The vacuum lifetime of vacuum packaging MEMS devices is calculated by theoretical calculation of the leakage rate of vacuum packaging. The experimental results show that the vacuum packaging shell designed by ourselves can meet the requirement of vacuum preservation for a long time, and the reliability of vacuum resistance melt packaging technology is proved.
【学位授予单位】:华中科技大学
【学位级别】:博士
【学位授予年份】:2013
【分类号】:TG456

【参考文献】

相关期刊论文 前10条

1 张丽华,李军,邵崇俭;MEMS封装中真空封口及真空度检测技术[J];微纳电子技术;2003年Z1期

2 刘光辉,亢春梅;MEMS技术的现状和发展趋势[J];传感器技术;2001年01期

3 程迎军,朱锐,许薇,罗乐;MEMS器件真空封装模型模拟[J];传感器技术;2004年12期

4 钟先信,李建蜀,肖沙里,徐涛,朱维安,缪秀娥;微系统集成技术研究的动向[J];光学精密工程;1998年04期

5 朱文峰,林忠钦,来新民,罗爱辉;基于多场耦合的车门铰链凸焊过程有限元仿真[J];焊接学报;2005年01期

6 罗爱辉,陈关龙,来新民,朱文峰;轿车车门铰链的焊接变形 II.凸焊焊后残余应力及变形分析[J];焊接学报;2005年05期

7 王亚珍,朱文坚;微机电系统(MEMS)技术及发展趋势[J];机械设计与研究;2004年01期

8 施芹;丁荣峥;苏岩;裘安萍;;硅微陀螺仪器件级真空封装[J];机械工程学报;2009年02期

9 邓昭,饶文琦,任天辉,余来贵,刘维民,余新良;微机电系统的微观摩擦学研究进展[J];摩擦学学报;2001年06期

10 顾伯勤;氦质谱检漏法应用研究[J];南京化工大学学报(自然科学版);2000年01期



本文编号:2242720

资料下载
论文发表

本文链接:https://www.wllwen.com/falvlunwen/zhishichanquanfa/2242720.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户2e13a***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com