磁控溅射法制备的CdS:Al薄膜的性质研究

发布时间：2018-01-23 12:32

本文关键词： CdS Al薄膜射频磁控溅射 CdTe太阳电池　出处：《无机材料学报》2017年04期 　论文类型：期刊论文

【摘要】：采用Al和CdS双靶共溅射的方法,调控Al和CdS源的沉积速率,制备出不同Al掺杂浓度的CdS:Al薄膜。通过XRD、SEM、AFM、紫外可见透射光谱分析、常温霍尔测试对CdS:Al薄膜的结构、形貌、光学和电学性质进行表征。XRD结果表明,不同Al掺杂浓度的CdS:Al薄膜均为六方纤锌矿结构的多晶薄膜,并且在(002)方向择优生长。SEM和AFM结果表明,CdS:Al薄膜的表面均匀致密,表面粗糙度随着Al掺杂浓度的增加略有增加。紫外可见透射光谱分析表明,CdS:Al薄膜禁带宽度在2.42~2.46 eV之间,随着Al掺杂浓度的增加而略微减小。常温霍尔测试结果证明,掺Al对CdS薄膜的电学性质影响显著,掺Al原子浓度3.8%以上的CdS薄膜,载流子浓度增加了3个数量级,电阻率下降了3个数量级。掺Al后的CdS薄膜n型更强,有利于与CdTe形成更强的内建场,从而提高太阳电池效率。用溅射方法制备的CdS:Al薄膜的性质适合用作CdTe薄膜太阳电池的窗口层。
[Abstract]:Different Al doped CdS:Al thin films were prepared by Al and CdS double target co-sputtering, and the deposition rate of Al and CdS sources was regulated. The structure, morphology, optical and electrical properties of CdS:Al thin films were characterized by UV-Vis transmission spectroscopy and Hall test at room temperature. The CdS:Al films with different Al doping concentrations are polycrystalline with hexagonal wurtzite structure, and the preferred growth direction is in the direction of 002. The results of SEM and AFM show that the films are polycrystalline with hexagonal wurtzite structure. The surface of CdS:Al thin films is uniform and dense, and the surface roughness increases slightly with the increase of Al doping concentration. The band gap of CdS:Al thin films is between 2.42 and 2.46 EV, which decreases slightly with the increase of Al doping concentration. Al-doped CdS films have a significant effect on the electrical properties. The carrier concentration of CdS films with Al atom concentration above 3.8% increases by three orders of magnitude. The resistivity decreases by three orders of magnitude. The n-type CdS films doped with Al have stronger n-type, which is beneficial to the formation of a stronger built-in field with CdTe. In order to improve the efficiency of solar cells, the properties of CdS:Al thin films prepared by sputtering are suitable for the window layer of CdTe thin film solar cells.
【作者单位】：四川大学材料科学与工程学院;
【基金】：国家高技术研究发展计划(863计划)(2015AA050610)~~
【分类号】：TB383.2;TM914.4
【正文快照】： Cd S是化学性能稳定的宽禁带半导体材料,在可见光范围内具有较高的透光性,在薄膜太阳能电池中常常作为n型窗口层和缓冲层材料,与p型Cd Te形成异质结太阳电池[1-2]。同时Cd S还具有优异的光电转换和发光性能,在红外探测、发光二极管、传感器和光电显示器件等领域也有广泛应用[3

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