有序可控纳米银球阵列对a-SiN_x∶O薄膜光致发光增强的研究

发布时间：2018-02-03 08:48

本文关键词： 非晶掺氧氮化硅薄膜局域表面等离激元光致发光激光退火　出处：《南京大学学报(自然科学)》2017年03期 　论文类型：期刊论文

【摘要】：采用聚苯乙烯(PS)纳米小球自组装技术结合激光退火方法制备了三种不同尺寸纳米银球阵列,研究不同尺寸纳米银球阵列对非晶掺氧氮化硅(a-SiN_x∶O)薄膜的光致发光的影响.首先,在p型硅衬底上铺有三种不同尺寸的聚苯乙烯(PS)纳米小球,再采用磁控溅射系统蒸镀银薄膜,然后用激光对该银薄膜进行处理.最后,采用等离子体增强化学气相沉积(PECVD)系统在样品表面生长非晶掺氧氮化硅薄膜.实验结果表明,相比于未引入纳米银球阵列的a-SiN_x∶O薄膜,引入170nm、220nm和300nm银球阵列的a-SiN_x∶O薄膜,其光致发光强度(PL)分别增强4.6、3.1和1.3倍.样品的原子力显微镜(AFM)图像显示,纳米银颗粒呈周期性排列且尺寸可控.荧光光谱分析表明,随着纳米银球阵列尺寸的增加,薄膜的发光峰位出现了红移.通过分光光度计UV-3600对a-SiN_x∶O薄膜的消光谱进行了测量计算.为了进一步研究不同尺寸纳米银球阵列对非晶掺氧氮化硅(a-SiN_x∶O)薄膜的光致发光的影响,对其消光谱和PL谱进行了对比分析.实验证实了a-SiN_x∶O薄膜光致发光的增强来自于金属银局域表面等离激元(LSP)与a-SiN_x∶O薄膜光发射之间的耦合.
[Abstract]:Using polystyrene (PS) nanoparticles self-assembly technique combined with laser annealing method for three different sizes of nano silver array was prepared. The size of nano silver on the array of different oxygen doped amorphous silicon nitride (a-SiN_x: O) the effect of light emitting film. First of all, there are three different sizes of polystyrene in P type silicon on the substrate (PS) nanoparticles, and then steamed silver film by magnetron sputtering, and then the silver films were treated with laser. Finally, using plasma enhanced chemical vapor deposition (PECVD) system for the growth of oxygen doped amorphous silicon nitride film on the surface of the sample. The experimental results show that compared to the introduction of nano silver array without a-SiN_x: O film, the introduction of 170nm, 220nm and 300nm Yinqiu array a-SiN_x: O films and its photoluminescence intensity (PL) enhanced 4.6,3.1 and 1.3 times respectively. Atomic force microscopy samples (AFM) images show that the nano silver stars The particle is arranged periodically and controllable size. The fluorescence spectra show that with the increase of silver nano array size, peak film had a red shift. The spectrophotometer UV-3600 measured and calculated on a-SiN_x: O film extinction spectrum. In order to further study the different sizes of nano silver on oxygen doped amorphous array silicon nitride (a-SiN_x: O) the effect of light emitting film, made a comparative analysis on the extinction spectrum and PL spectrum. The experiment proved that a-SiN_x: O thin film light induced enhancement of metallic silver from localized surface plasmon luminescence (LSP) coupled with a-SiN_x: O thin film light emission.

【作者单位】：南京大学电子科学与工程学院;
【基金】：国家重点基础研究发展计划(2010CB934402) 国家自然科学基金(61071008,61571221,61634003,11374153) 高等学校博士学科点专项科研基金(20130091110024) 江苏高校优势学科建设工程项目江苏省六大人才高峰项目(DZXX-001)
【分类号】：TB383.2
【正文快照】： 硅基光电子集成为集成电路产业可持续发展提供了解决方案,其中硅基光电子集成的关键在于实现高效率的硅基光源[1-10].非晶掺氧氮化硅(a-SiNx∶O)薄膜作为一种硅基发光材料,具有发光波长可调、制备简单等优点,为了实现硅基发光材料的实际应用,a-SiNx∶O薄膜的发光效率有待提高.

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