氧族化合物半导体薄膜的制备及性能研究

发布时间：2018-02-10 22:36

  本文关键词： 太阳能电池材料 CdS薄膜 Cu_2O薄膜 CuS薄膜 多元醇法 化学浴沉积法　出处：《西南交通大学》2014年硕士论文　论文类型：学位论文

【摘要】：太阳能电池是解决能源危机和环境问题的最有效手段之一,但高成本限制了太阳能电池的大规模应用。因此,通过低成本的制备方法和材料的使用来降低太阳能电池的成本具有重要的实用价值。本文主要研究了采用低成本的制备方法(多元醇法和化学浴沉积法)来制备低成本的氧族化合物半导体薄膜材料,期望可以为后续制备低成本太阳能电池提供新的参考方法。研究结果如下： (1)首次采用多元醇法,以醋酸镉为镉源,硫脲为硫源,二甘醇为溶剂,在玻璃基底上制备CdS薄膜,并系统研究了制备条件对薄膜的影响。结果表明,当硫镉浓度比增大时,薄膜厚度呈先增后减的趋势,与透射率的趋势相反,并且当浓度比为1：5和1：2时出现瓣状CdS,浓度比继续增大,颗粒粒径减小；当沉积时间增加时,薄膜的厚度增加,组成薄膜的颗粒粒径增大,透射率减小,并且在70min后反应基本停止；当沉积温度增加时,薄膜厚度呈先增后减的趋势,透射率呈现先减后增的趋势,并且温度升高粗糙度下降,薄膜表面更加平整；此外,不同条件下制备的薄膜带隙均略大于块体CdS的带隙值。 (2)采用多元醇法,以硝酸铜为铜源,乙二醇为溶剂和还原剂,在玻璃基底上制备Cu20薄膜,并系统研究了制备条件对薄膜的影响。结果表明,当铜源浓度增大时,薄膜厚度和颗粒的平均粒径均增大,透射率减小,但孔隙也随之增加,对基底的覆盖率减小；当沉积时间增加时,薄膜的厚度与颗粒粒径均增大,薄膜透射率减小,但颗粒间的孔隙也随之增加,沉积时间超过90min时,颗粒基本孤立,没有连接成膜；当沉积温度增高时,薄膜厚度与颗粒粒径均呈先减后增的趋势,与透射率趋势相反；此外,不同条件下制备的Cu20薄膜均为立方晶系结构,带隙均大于块体Cu20的带隙值。 (3)采用化学浴沉积法,氯化铜为铜源,硫脲为硫源,氨水提供氢氧根离子,三乙醇胺(TEA)为络合剂,在玻璃基底上制备CuS薄膜,并系统研究了制备条件对薄膜的影响。结果表明,当硫铜浓度比增大时,除浓度比为3：1时薄膜厚度相对较小外,其它浓度比下薄膜的厚度差别不大,薄膜颗粒粒径呈现减小的趋势；当三乙醇胺添加量增加时,薄膜的厚度和颗粒粒径均呈增大的趋势,透射率减小,但颗粒间的孔隙也随之增加,三乙醇胺添加量超过7ml时,颗粒平均粒径均在300nm以上；当氨水添加量增加时,薄膜的厚度和颗粒粒径均呈增大的趋势,透射率减小,孔隙增大,氨水添加量在9ml时颗粒平均粒径达到400nm以上；此外,不同条件下制备的CuS薄膜均为六方晶系结构,带隙均大于块体CuS的带隙值。 (4)分别对三个体系的沉积机制进行了研究,发现当薄膜在溶液中进行生长时,薄膜基本属于颗粒薄膜且组成薄膜的颗粒基本为球形或椭球形,薄膜由颗粒的不断生长最终合并而成,符合岛状生长特征,因此推测属于离子-离子生长机制。同时溶液中通过同质沉积生成的颗粒也会吸附在薄膜表面,但附着力较差,可以通过超声清洗将其去除掉。
[Abstract]:The solar cell is one of the most effective means to solve the energy crisis and the environmental problem , but the high cost limits the large - scale application of the solar cell . Therefore , the cost of the solar cell is reduced by the low - cost preparation method and the use of the material . This paper mainly studies the low - cost preparation method ( polyol method and chemical bath deposition method ) to prepare the low - cost oxygen group compound semiconductor thin film material , and it is expected that the new reference method can be provided for the subsequent preparation of the low - cost solar cell . The results show that when the concentration ratio is 1 : 5 and 1 : 2 , the thickness of the film increases and the particle size of the film decreases . When the concentration ratio is 1 : 5 and 1 : 2 , the particle size of the film increases and the particle size of the film decreases . When the deposition temperature increases , the film thickness increases , the transmittance decreases , and the surface of the film is even more even when the deposition temperature increases . In addition , the film band gap prepared under different conditions is slightly larger than the band gap value of the bulk CdS . ( 2 ) Using polyol method , copper nitrate as copper source , ethylene glycol as solvent and reducing agent to prepare Cu20 thin film on glass substrate . The results showed that when the concentration of copper source increased , the film thickness and the average particle size of the particles increased and the transmittance decreased , but the porosity of the film was decreased . When the deposition time was over 90 min , the film thickness and the particle size increased and the transmittance decreased . In addition , the Cu20 films prepared under different conditions were cubic crystal structure , and the band gap was larger than the band gap value of the bulk Cu20 . ( 3 ) Using chemical bath deposition method , copper chloride is copper source , thiourea is sulfur source , ammonia water provides hydroxide ion , triethanolamine ( TEA ) is complexing agent , the thickness of the film and the particle size of the film are smaller than that of the lower film when the concentration ratio is 3 鈭，

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