衬底温度对直流反应磁控溅射TiN电极薄膜显微结构及导电性能的影响

发布时间：2018-03-02 12:11

  本文选题：TiN　切入点：电极薄膜　出处：《功能材料》2017年08期 　论文类型：期刊论文

【摘要】：二氧化铪基新型铁电薄膜器件等研究提出了在低衬底温度下制备高导电性和低表面粗糙度纳米超薄TiN电极薄膜的迫切需求。利用直流反应磁控溅射方法在单晶硅基片上制备TiN薄膜,衬底温度范围从室温~350℃,以XPS、XRD、AFM以及XRR等为主要手段对薄膜样品的成分、物相、表面粗糙度以及厚度和密度等进行了表征分析。结果表明在350℃的较低衬底温度下,通过减少溅射沉积时间可获得厚度30nm的高导电性TiN电极薄膜。
[Abstract]:New ferroelectric thin film devices based on hafnium oxide have been studied and the urgent need to fabricate nanocrystalline ultrathin TiN thin films with high conductivity and low surface roughness at low substrate temperature has been put forward. DC reactive magnetron sputtering method has been used in monocrystalline silicon. TiN thin films were prepared on substrates. The substrate temperature ranges from room temperature to 350 鈩，

本文编号：1556468