热原子层沉积技术制备的TiAlC薄膜的性能

发布时间：2018-03-18 15:43

本文选题：TiAlC薄膜　切入点：热原子层沉积　出处：《材料保护》2017年09期 　论文类型：期刊论文

【摘要】：为了解以热原子层沉积技术制备的TiAlC薄膜的特性,在不同基底温度下,以硅和二氧化硅为基底材料制备了TiAlC薄膜;采用椭偏仪、分光光度计、X射线光电子能谱、原子力显微镜、X射线衍射仪对薄膜的性能进行了测试。结果表明:随着基底温度的升高,TiAlC薄膜平均透射率逐渐降低,吸收边产生红移,光学带隙由2.56eV降低到0.61 eV;薄膜的沉积速率由0.09 nm/cycle升高到0.20 nm/cycle,表面粗糙度由1.82 nm降低到0.49 nm;不同基底温度下生长的薄膜均为无定型结构;膜层中的氧源于空气的自然氧化,且膜层的氧化程度与膜层中TiC的含量及膜层的致密性有关;TiAlC薄膜的形成主要源于高温条件下TiC的形成及三甲基铝的分解。
[Abstract]:In order to understand the characteristics of TiAlC thin films prepared by thermal atomic layer deposition, TiAlC thin films were prepared by using silicon and silica as substrates at different substrate temperatures, and X-ray photoelectron spectroscopy (XPS) was used by spectrometer, ellipsometry, spectrometer, X-ray photoelectron spectroscopy (XPS), X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron spectroscopy (XPS). The properties of the films were measured by atomic force microscope (AFM) X-ray diffractometer. The results show that the average transmittance of TiAlC thin films decreases with the increase of substrate temperature, and the absorption edge of TiAlC films is red-shifted. The optical band gap was reduced from 2.56 EV to 0.61 EV, the deposition rate of the film increased from 0.09 nm/cycle to 0.20 nm cycle.The surface roughness decreased from 1.82 nm to 0.49 nm. The oxidation degree of the film is related to the content of TiC in the film and the densification of the film. The formation of TiAlC film is mainly due to the formation of TiC and the decomposition of trimethyl aluminum at high temperature.
【作者单位】：凯里学院物理与电子工程学院;
【基金】：贵州省“125计划”重大科技专项项目(黔教合重大专项字[2014]037号) 贵州省科学技术基金项目(黔科合J字[2014]2148号) 贵州省科技合作计划项目(黔科合LH字[2015]7743号) 贵州省2016年省级本科教学工程项目(20161114020)资助
【分类号】：O484

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