化学气相沉积法于镓酸锂基板生长氧化锌薄膜的研究

发布时间：2018-03-24 22:15

  本文选题：氧化锌薄膜　切入点：镓酸锂　出处：《无机盐工业》2017年09期

【摘要】：研究了利用化学气相沉积法在镓酸锂(001)基板上生长氧化锌薄膜,探讨了生长温度、生长压力、生长时间对薄膜结构与特性的影响,以期寻找出生长高品质氧化锌(0002)薄膜的最佳条件。研究结果表明,在氧气与氮气流量比为600/400、生长压力为6.67 k Pa、生长温度为550℃、生长时间为60 min条件下,于镓酸锂(001)基板上能够生长出高质量的氧化锌(0002)薄膜。
[Abstract]:Zinc oxide thin films were grown on lithium gallium oxide substrates by chemical vapor deposition. The effects of growth temperature, growth pressure and growth time on the structure and properties of the films were discussed. The results show that under the conditions of oxygen / nitrogen flow ratio of 600 / 400, growth pressure of 6.67 KPA, growth temperature of 550 鈩，

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