铜铟镓硒薄膜的拉曼和可见-近红外光谱表征

发布时间：2018-04-02 06:10

本文选题：CIGS　切入点：薄膜　出处：《光谱学与光谱分析》2016年10期

【摘要】：采用恒电位电沉积法在ITO上制备了铜铟镓硒(CIGS)前驱体薄膜,该前驱体薄膜在充氩气管式炉中经过高温硒化可得到结晶良好的CIGS薄膜。采用X-射线衍射(XRD)、拉曼光谱(Raman)、扫描电子显微镜(SEM)和紫外-可见光-近红外光谱仪分别表征了CIGS薄膜的结构、形貌、成分以及可见-近红外光谱(Vis-NIR)吸收特性。XRD结果表明前驱体薄膜高温硒化后所得的CIGS薄膜具有(112)择优取向,薄膜中CIGS晶粒的平均尺寸为24.7nm,Raman光谱表明薄膜中的CIGS是具有黄铜矿结构的四元纯相,没有其他二元三元杂相存在。Vis-NIR测量结果表明CIGS的禁带宽度随薄膜中镓含量的增加而增加,当Ga含量达5.41%时,通过吸收光谱测得CIGS的禁带宽度为1.11eV,通过理论计算得到镓铟比为Ga/(In+Ga)=16.3%,小于SEM测量所得的镓铟比Ga/(In+Ga)=21.4%,这表明还需进一步提高CIGS薄膜的结晶度。所有测量表明优化后的ITO/CIGS非常适合用来制作高质量的双面太阳能电池。该研究提出了制备低成本CIGS前驱体薄膜及高温硒化的新方法,通过这些方法在ITO上制备了均匀、致密、附着力好的CIGS薄膜。通过上述表征可知,在新工艺下制备的CIGS薄膜结晶度高,成分合理,无杂相,光吸收性质好。与磁控溅射法类似,电沉积法非常适合大面积工业化生产,该工作对CIGS的规模化生产具有重要的借鉴意义。
[Abstract]:Copper indium gallium selenite (CIGS) precursor thin films were prepared on ITO by potentiostatic electrodeposition. The CIGS thin films with good crystallization can be obtained by high temperature selenization in argon filled tube furnace.The structure and morphology of CIGS thin films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and UV-Vis near infrared spectroscopy (UV-VIR), respectively.The composition and the absorption characteristics of Vis-NIR by visible and near infrared spectroscopy. The XRD results show that the CIGS films obtained by high temperature selenization have a preferred orientation.The average size of CIGS grain in the film is 24.7 nm ~ (-1). The CIGS in the film is a pure quaternary phase with chalcopyrite structure, and no other binary ternary impurity phase exists. Vis-NIR results show that the band gap of CIGS increases with the increase of gallium content in the film.When Ga content is 5.41%, the band gap width of CIGS is 1.11 EV measured by absorption spectrum, and the Gallium indium ratio is 16.3 / Ga/(In by theoretical calculation, which is smaller than that measured by SEM, which indicates that the crystallinity of CIGS films needs to be further improved.All measurements show that the optimized ITO/CIGS is very suitable for high-quality double-sided solar cells.In this study, a new method of preparing low-cost CIGS precursor films and high temperature selenization was proposed. Homogeneous, dense and good adhesion CIGS films were prepared on ITO by these methods.The results show that the CIGS films prepared under the new technology have high crystallinity, reasonable composition, no impurity phase and good optical absorption.Similar to the magnetron sputtering method, the electrodeposition method is very suitable for large-scale industrial production, and this work has important reference significance for the large-scale production of CIGS.
【作者单位】：中国农业大学理学院;中国科学院过程工程研究所;北京交通大学理学院;
【基金】：国家高新技术发展计划(863计划)项目(2015AA034201) 国家科技支撑项目(2009BAB49B04)资助
【分类号】：O484;TM914.42

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