电化学Fe掺杂增强FTO薄膜的可见光光电化学性能

发布时间：2018-04-19 06:24

本文选题：氟掺杂二氧化锡 + 铁掺杂　；参考：《电镀与涂饰》2017年09期

【摘要】：通过在Fe SO4溶液中将FTO(F掺杂SnO_2)导电玻璃电化学阴极极化,随后在500°C空气中热氧化,制备出对可见光有响应的Fe掺杂FTO薄膜。用扫描电子显微镜(SEM)、X射线衍射(XRD)和X射线光电子能谱(XPS)表征了薄膜的形貌、结构和表面特性。在可见光下测试了薄膜在1.0 mol/L NaOH溶液中零偏压下的光电流-时间曲线。结果显示,电化学修饰后的FTO薄膜表面呈纳米多孔形貌,薄膜中有1%(原子分数)左右的Fe元素掺杂且存在正交结构SnO_2和四方结构SnO_2两种物相。Fe掺杂FTO的光电流密度为0.5μA/cm~2,比无Fe掺杂的FTO薄膜(0.019μA/cm~2)显著增强。
[Abstract]:Fe doped FTO films were prepared by electrochemical cathodic polarization of FTO(F doped SnO2) conductive glass in Fe SO4 solution and then thermal oxidation in 500 掳C air.The morphology, structure and surface properties of the films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).The photocurrent-time curves of the films at zero bias voltage in 1.0 mol/L NaOH solution were measured under visible light.The results showed that the surface of FTO film was nano-porous after electrochemical modification.The photocurrent density of Fe doped SnO_2 and tetragonal SnO_2 is 0.5 渭 A / cm ~ (-2), which is significantly higher than that of Fe-doped FTO films (0.019 渭 A / cm ~ (2)).
【作者单位】：浙江师范大学物理化学研究所;
【基金】：国家自然科学基金(21173196)
【分类号】：TB383.2

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