基于柔性有机衬底微晶硅薄膜的制备及性能研究

发布时间：2018-04-20 00:05

  本文选题：微晶硅薄膜 + 结晶率　； 参考：《北京印刷学院》2014年硕士论文

【摘要】：随着人口的不断增加，社会的飞速发展，传统的化石燃料因其不可再生和对环境的污染，越来越难以满足人类日益增长的能源和环境需求。太阳能电池作为可再生无污染的新型绿色能源渐渐映入眼帘并逐渐成为人们研究的焦点。经过近些年的发展，硅基太阳能电池占据太阳能电池的主导地位，，应用在人们生活的各个领域。然而，由于其衬底的不可弯折，限制其更为广泛的应用及发展。为了拓宽其应用领域，本文采用空心阴极等离子体化学气相沉积在柔性有机衬底上制备微晶硅薄膜，进行硅基太阳能电池薄膜测量的研究。我们对比三种衬底：玻璃、表面沉积氧化铟锡(ITO)的玻璃以及表面沉积氧化铟锡的聚酰亚胺(PI)，研究在不同衬底温度、气体比例、工作气压和功率密度条件下沉积的微晶硅薄膜结构及性能，探讨工艺参数对薄膜沉积速率、结晶率等性能的影响。此外，还研究了微晶硅薄膜生长过程中微观结构随时间的演变，研究微晶硅薄膜可能的生长机制。得出以下结论： (1)工艺参数对微晶硅薄膜的生长有较大的影响。微晶硅薄膜沉积速率与衬底温度、气体比例、工作压强、功率密度均呈正相关升高。而结晶率随衬底温度、功率密度、气体比例的升高先升高再降低，随工作压强的升高单调降低。 (2)微空心阴极放电是一种有效的等离子体源，高电离率使得在90℃时也可以形成微晶硅结构,薄膜的微晶硅/非晶硅的晶化转化温度在80℃~90℃ (3)微晶硅的生长具有基体依赖性，不同衬底上微晶硅薄膜结晶率存在差异。玻璃和ITO玻璃上薄膜结晶率相近，而PI+ITO上薄膜结晶率较低。微晶硅薄膜的结晶性依赖于衬底材料。 (4)微晶硅薄膜的生长要经历三个阶段，即非晶相——非晶/微晶混合相——微晶相/单晶相。相比于PI+ITO衬底，在玻璃和ITO玻璃上更易于沉积微晶硅薄膜。生长机制可能遵循岛状生长的Volmer-weber模式。
[Abstract]:With the increasing of population and the rapid development of society, it is more and more difficult for traditional fossil fuels to meet the increasing energy and environmental needs because of their non-renewable and environmental pollution. As a new type of renewable green energy, solar cells have gradually come into view and become the focus of research. With the development of recent years, silicon-based solar cells occupy a dominant position in solar cells and are used in various fields of people's lives. However, due to the unbending of its substrate, its wider application and development is limited. In order to broaden its application field, microcrystalline silicon thin films were prepared on flexible organic substrates by hollow cathode plasma chemical vapor deposition, and the measurement of thin films of silicon based solar cells was carried out. We compare three kinds of substrates: glass, surface deposited indium tin oxide (ITO) glass and surface deposited indium tin oxide polyimide (Pi). The structure and properties of microcrystalline silicon films deposited at working pressure and power density were investigated. The effects of process parameters on the deposition rate and crystallization rate were discussed. In addition, the evolution of microstructure with time during the growth process of microcrystalline silicon thin films was studied, and the possible growth mechanism of microcrystalline silicon thin films was studied. Draw the following conclusions: The process parameters have great influence on the growth of microcrystalline silicon thin films. The deposition rate of microcrystalline silicon films is positively correlated with substrate temperature, gas ratio, working pressure and power density. However, with the increase of substrate temperature, power density and gas ratio, the crystallization rate increases first and then decreases, and decreases monotonously with the increase of working pressure. (2) Microhollow cathode discharge is an effective plasma source. The high ionization rate makes it possible to form microcrystalline silicon structure at 90 鈩

本文编号：1775329