金属表面等离激元增强ZnO基薄膜及多量子阱发光

发布时间：2018-05-06 09:00

本文选题：金属表面等离激元 + ZnO　；参考：《浙江大学》2014年硕士论文

【摘要】：ZnO具有较大的禁带宽度及激子束缚能,有望成为一种可靠的新型发光材料。对ZnO禁带宽度进行有效调控及提高ZnO基材料的发光效率,是促进ZnO在光电领域应用的必要条件。目前,利用金属表面等离激元增强半导体材料的发光性质已经成为一个新的研究热点。基于上述几点,本文分别以ZnO、ZnCdO薄膜和ZnO/ZnMgO多量子阱为研究对象,利用金属表面等离激元增强其带边发光,并对发光增强机理进行了深入探究。主要工作内容如下：利用脉冲激光沉积方法制备ZnO和ZnCdO薄膜。通过一系列手段对其进行结晶性质、化学成分及发光性能表征。生长的ZnO及ZnCdO薄膜有明显的带边发光,且缺陷发光受到抑制,表现出较好的结晶质量。通过掺入适量的Cd元素,有效地调控了ZnO的发光峰位。利用电子束蒸发方法制备金属薄膜并对其表面等离激元特性进行了探索。结合快速热退火工艺,利用反浸润法制备形成A1纳米颗粒。利用电子束蒸发结合标准光刻工艺制备金属有序微米阵列。同时,我们还利用聚苯乙烯(PS)球模板结合电子束蒸发工艺制备金属纳米阵列,实现了对金属阵列纳米尺寸的有效调控。利用反浸润法制备Al纳米颗粒,分别实现了ZnO薄膜和ZnO/ZnMgO多量子阱室温下7倍和1.5倍的室温PL增强效果。探究了金属厚度对发光增强的影响,通过SEM、XPS及变温PL测试,探究了发光增强的机理。探究了采用新型ZnCdO/Metal/Substrate结构来增强ZnCdO材料发光性能的方法,并使ZnCdO的发光强度在Ag薄膜和微米图形化阵列的情况下分别增强了7.1倍和21.2倍。实验证明,通过在ZnO和衬底间插入金属层,能更好地避免金属对光的反射作用及金属阵列制备阶段对发光薄膜的破坏,从而实现更高倍数的发光增强。
[Abstract]:Because of its wide band gap and exciton binding energy, ZnO is expected to be a reliable new luminescent material. The effective regulation of ZnO bandgap and the improvement of luminescence efficiency of ZnO based materials are the necessary conditions to promote the application of ZnO in optoelectronic field. At present, the enhancement of luminescent properties of semiconductor materials by using metal surface isopherons has become a new research hotspot. Based on the above points, the ZnO / ZnCdO thin films and ZnO/ZnMgO multiple quantum wells were used to enhance the band-edge luminescence by using the isoexcitators on the metal surface, and the mechanism of the luminescence enhancement was investigated. The main tasks are as follows: ZnO and ZnCdO thin films were prepared by pulsed laser deposition. The crystalline properties, chemical composition and luminescence properties were characterized by a series of methods. The growth of ZnO and ZnCdO thin films has obvious band-edge luminescence, and the defect luminescence is inhibited, showing good crystallization quality. The luminescence peak of ZnO was effectively regulated by adding appropriate amount of CD. Electron beam evaporation (EBE) method was used to prepare metal thin films and the surface isophosphoric properties were investigated. In combination with rapid thermal annealing (RTA) process, Al nanoparticles were prepared by reverse soakage method. Metal ordered micron arrays were prepared by electron beam evaporation and standard lithography. At the same time, we also prepared metal nanoarrays by using polystyrene (PS) sphere template and electron beam evaporation (EBE) process, which can effectively control the nanoscale size of metal arrays. Al nanoparticles were prepared by reverse soakage method. The PL enhancement effects of ZnO films and ZnO/ZnMgO multiple quantum wells at room temperature were 7 and 1.5 times, respectively. The effect of metal thickness on luminescence enhancement was investigated, and the mechanism of luminescence enhancement was investigated by means of SEMXPS and variable temperature PL measurements. The new ZnCdO/Metal/Substrate structure was used to enhance the luminescent properties of ZnCdO materials, and the luminescence intensity of ZnCdO was increased by 7.1 times and 21.2 times respectively in the case of Ag thin films and micron patterned arrays. The experimental results show that by inserting metal layer between ZnO and substrate, the reflection of metal to light and the destruction of luminescent film during the preparation of metal array can be avoided better, and thus a higher multiple of luminescence enhancement can be realized.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TB383.2

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