以不同前驱体制备的TiAlC薄膜的性能对比

发布时间：2018-07-11 17:14

本文选题：薄膜 + 原子层沉积　；参考：《激光与光电子学进展》2017年11期

【摘要】：采用原子层沉积技术,以Al(CH3)3为铝的前驱体,分别以TiCl4和四(二甲基氨基)钛(TDMAT)为钛的前驱体制备了两种TiAlC薄膜,并对比分析了它们的薄膜性能。结果表明,这两种薄膜均存在不同程度的自然氧化;以TDMAT为前驱体制备的膜层的光学带隙有两个值,分别是0.68eV和2.00eV,而以TiCl4为前驱体制备的薄膜的光学带隙为0.61eV,前者的平均透射率、沉积速率、电阻率及表面粗糙度均高于后者的,但前者的厚度均匀性较差;以TiCl4为前驱体制备的薄膜为无定形结构,而在以TDMAT为前驱体制备的薄膜中出现了TiN晶体;相对于有机化合物TDMAT而言,无机化合物TiCl4更适合作为制备TiAlC栅介质材料的前驱体。
[Abstract]:Two kinds of TiAlC thin films were prepared by atomic layer deposition with Al (Ch _ 3) _ 3 as precursor and TiCl _ 4 and TDMAT as precursors, respectively, and their properties were compared and analyzed. The results show that the two kinds of films have different degrees of natural oxidation, and the optical band gap of the films prepared with TDMAT as precursor has two values. The average transmittance, deposition rate, resistivity and surface roughness of the thin films prepared with TiCl _ 4 as precursor were 0.68eV and 2.00eV, respectively, but the thickness uniformity of the former was lower than that of the latter, but the average transmittance, deposition rate, resistivity and surface roughness of the former were higher than those of the latter. The films prepared with TiCl4 as precursor have amorphous structure, but tin crystals appear in the films prepared by TDMAT. Compared with organic compound TDMAT, inorganic compound TiCl4 is more suitable as precursor for preparing TiAlC gate dielectric materials.
【作者单位】：凯里学院物理与电子工程学院;
【基金】：贵州省“125计划”重大科技专项(黔教合重大专项字[2014]037号) 贵州省科学技术基金(黔科合J字[2014]2148号) 贵州省科技合作计划(黔科合LH字[2015]7743号) 贵州省2016年省级本科教学工程项目(20161114020)
【分类号】：O484

【相似文献】