GZO透明导电薄膜的制备及其应用研究
发布时间：2018-07-29 21:00
【摘要】：本文利用射频磁控溅射技术制备GZO透明导电薄膜,研究了溅射压强、溅射功率、高温退火、H等离子处理等工艺对薄膜性能的影响,制得了光电性能优异的GZO透明导电薄膜。在此基础上,设计了GZO薄膜用作硅基太阳能电池透明窗口和电极的新型太阳能电池,开展了前期测试与研究。主要工作内容包括： 1.采用射频磁控溅射技术在玻璃衬底上生长了高透明导电的GZO薄膜,研究了溅射压强、溅射功率对GZO薄膜结构、形貌、电学性能、光电性能的影响以及GZO薄膜在H等离子体中的稳定性和在不同气氛下的高温稳定性。薄膜均呈现C轴择优取向生长,在可见光范围平均透过率均大于90%。GZO薄膜在300℃、0.2Pa、180W条件下获得最优光电性能。氩气气氛和真空下退火的GZO薄膜电学性能明显提高,而氧气气氛退火的则相反。H等离子体处理后的GZO薄膜表面粗糙度明显增加,而GZO透明导电薄膜在H等离子体环境中的光电性能表现稳定,验证了H等离子体处理用于GZO物理制绒的可行性。 2.在GZO透明导电薄膜制备已经比较系统的基础上,设计了GZO用作透明窗口和电极的新型晶体硅太阳能电池。GZO透明导电薄膜作为收集载流子的窗口,可减少银栅电极的使用,减少载流子横向运动引起的高接触电阻,并增加有效受光面积,降低成本。随后,考虑到要在高温下制备背电极,我们进行了退火处理及测试表征,分析讨论了退火对GZO/Si、背电极接触和电池性能的影响。之后改进了电池结构设计,加入一层ITO缓冲层,电池的开路电压、短路电流密度及电池光电转换效率都显著增加,并分析了具有不同膜厚的ITO对复合膜和对电池性能的影响。
[Abstract]:In this paper, GZO transparent conductive thin films were prepared by RF magnetron sputtering. The effects of sputtering pressure, sputtering power and high temperature annealed H plasma on the properties of the films were studied. The transparent conductive GZO thin films with excellent optoelectronic properties were prepared. On this basis, a new type of solar cell with GZO thin film used as transparent window and electrode of silicon based solar cell was designed and tested and studied. The main work includes: 1. High transparent and conductive GZO thin films were grown on glass substrates by RF magnetron sputtering. The effects of sputtering pressure and sputtering power on the structure, morphology and electrical properties of GZO thin films were investigated. The influence of photoelectric properties and the stability of GZO films in H plasma and at high temperature in different atmospheres. The average transmittance of the films in the visible range is higher than that of the 90%.GZO films at 300 鈩，
本文编号：2154003
[Abstract]:In this paper, GZO transparent conductive thin films were prepared by RF magnetron sputtering. The effects of sputtering pressure, sputtering power and high temperature annealed H plasma on the properties of the films were studied. The transparent conductive GZO thin films with excellent optoelectronic properties were prepared. On this basis, a new type of solar cell with GZO thin film used as transparent window and electrode of silicon based solar cell was designed and tested and studied. The main work includes: 1. High transparent and conductive GZO thin films were grown on glass substrates by RF magnetron sputtering. The effects of sputtering pressure and sputtering power on the structure, morphology and electrical properties of GZO thin films were investigated. The influence of photoelectric properties and the stability of GZO films in H plasma and at high temperature in different atmospheres. The average transmittance of the films in the visible range is higher than that of the 90%.GZO films at 300 鈩，
本文编号：2154003
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